Datasheet

Section 20 Electrical Characteristics
Rev.7.00 Feb. 14, 2007 page 860 of 1108
REJ09B0089-0700
20.3.6 Flash Memory Characteristics
Table 20.29 Flash Memory Characteristics
Condition B: V
CC
= 3.0 V to 3.6 V, AV
CC
= 3.0 V to 3.6 V, V
ref
= 3.0 V to AV
CC
, V
SS
= AV
SS
=
0 V, T
a
= 0°C to +75°C (program/erase operating temperature range: regular
specifications), T
a
= 0°C to +85°C (program/erase operating temperature range:
wide-range specifications)
Item Symbol Min Typ Max Unit Test Conditions
Programming time
*
1
*
2
*
4
t
P
— 3 30 ms/128 bytes
Erase time
*
1
*
3
*
4
t
E
— 80 800 ms/4-kbyte
block
— 500 5000 ms/32-kbyte
block
— 1000 10000 ms/64-kbyte
block
Programming time (total)
*
1
*
2
*
4
∑t
P
— 10 30 s/512 kbytes T
a
= 25°C when all
cleared to 0
Erase time (total)
*
1
*
2
*
4
∑t
E
— 10 30 s/512 kbytes
Programming and erase time
(total)
*
1
*
2
*
4
∑t
PE
— 20 60 s/512 kbytes
T
a
= 25°C
Number of overwrites NWEC 100
*
3
10000
*
5
— Times
Data retention time
*
4
t
DRP
10 — — Years
Notes: 1. The exact programming and erase times depend on the characteristics of the data.
2. Programming and erase times do not include data transfer time.
3. This is the minimum number of rewrites after which all characteristics are guaranteed.
(The guaranteed range is 1 to minimum.)
4. This characteristic applies when the number of rewrites is within the specification range,
including minimum values.
5. Reference value for 25°C (as a guideline, rewriting should normally function up to this
value).