Datasheet

Section 20 Electrical Characteristics
Rev.7.00 Feb. 14, 2007 page 849 of 1108
REJ09B0089-0700
20.2.6 Flash Memory Characteristics
Table 20.19 Flash Memory Characteristics
Condition B: V
CC
= 3.0 V to 3.6 V, AV
CC
= 3.0 V to 3.6 V, V
ref
= 3.0 V to AV
CC
, V
SS
= AV
SS
=
0 V, T
a
= 0°C to +75°C (program/erase operating temperature range: regular
specifications), T
a
= 0°C to +85°C (program/erase operating temperature range:
wide-range specifications)
Item Symbol Min Typ Max Unit
Test
Conditions
Programming time
*
1
*
2
*
4
t
P
— 10 200 ms/
128 bytes
Erase time
*
1
*
3
*
6
t
E
— 50 1000 ms/block
Reprogramming count N
WEC
100
*
7
10000
*
8
— Times
Data retention time
*
9
t
DRP
10 — — Years
Programming Wait time after SWE bit setting
*
1
x 1 — — μs
Wait time after PSU bit setting
*
1
y 50 — — μs
Wait time after P bit setting
*
1
*
4
z (z1) — — 30 μs 1 ≤ n ≤ 6
(z2) — — 200 μs 7 ≤ n ≤ 1000
(z3) — — 10 μs Additional-
program-
ming time
wait
Wait time after P bit clearing
*
1
α 5 — — μs
Wait time after PSU bit clearing
*
1
β 5 — — μs
Wait time after PV bit setting
*
1
γ 4 — — μs
Wait time after H'FF dummy write
*
1
ε 2 — — μs
Wait time after PV bit clearing
*
1
η 2 — — μs
Wait time after SWE bit clearing
*
1
θ 100 — — μs
Maximum number of writes
*
1
*
4
N — — 1000
*
5
Times
Erasing Wait time after SWE bit setting
*
1
x 1 — — μs
Wait time after ESU bit setting
*
1
y 100 — — μs
Wait time after E bit setting
*
1
*
6
z — — 10 μs
Wait time after E bit clearing
*
1
α 10 — — μs
Wait time after ESU bit clearing
*
1
β 10 — — μs
Wait time after EV bit setting
*
1
γ 20 — — μs
Wait time after H'FF dummy write
*
1
ε 2 — — μs
Wait time after EV bit clearing
*
1
η 4 — — μs
Wait time after SWE bit clearing
*
1
θ 100 — — μs
Maximum number of erases
*
1
*
6
N — — 100 Times