Datasheet

Section 17 ROM
Rev.7.00 Feb. 14, 2007 page 750 of 1108
REJ09B0089-0700
Table 17.58 Commands in PROM Mode
1st Cycle 2nd Cycle
Command
Number
of Cycles
Memory
MAT to be
Accessed
Mode Address Data Mode Address Data
1+n User MAT Write X H'00 Read RA Dout
Memory-read
mode
User boot
MAT
Write X H'05
129 User MAT Write X H'40 Write WA Din Auto-program
mode
User boot
MAT
Write X H'45
2 User MAT Write X H'20 Write X H'20 Auto-erase
mode
User boot
MAT
Write X H'25 H'25
Status-read
mode
2 Common to
both MATs
Write X H'71 Write X H'71
Notes: 1. In auto-program mode, 129 cycles are required in command writing because of the
simultaneous 128-byte write.
2. In memory read mode, the number of cycles varies with the number of address writing
cycles (n).
17.28.3 Memory-Read Mode
(1) On completion of an automatic program, automatic erase, or status read, the LSI enters a
command waiting state. So, to read the contents of memory after these operations, issue the
command to change the mode to the memory-read mode before reading from the memory.
(2) In memory-read mode, the writing of commands is possible in the same way as in the
command-write state.
(3) After entering memory-read mode, continuous reading is possible.
(4) After power has first been supplied, the LSI enters the memory-read mode. For the AC
characteristics in memory read mode, see section 17.29.2, AC Characteristics and Timing in
PROM Mode.