Datasheet

Rev.7.00 Feb. 14, 2007 page xiii of xxxii
REJ09B0089-0700
Item Page Revision (See Manual for Details)
20.2.6 Flash
Memory
Characteristics
Table 20.19 Flash
Memory
Characteristics
848 "⎯Preliminary⎯" deleted from table 20.19
20.1 Electrical
Characteristics of
Mask ROM Version
(H8S/2319,
H8S/2318,
H8S/2317S,
H8S/2316S,
H8S/2315, H8S/2314)
and ROMless Version
(H8S/2312S)
817 Section 20.1 title amended
20.2.6 Flash Memory
Characteristics
Table 20.19 Flash
Memory
Characteristics
849 Table 20.19 amended
Item Symbol Min Typ Max Unit
Test
Conditions
Programming time
*
1
*
2
*
4
t
P
— 10 200 ms/
128 bytes
Erase time
*
1
*
3
*
6
t
E
— 50 1000 ms/block
Reprogramming count N
WEC
100
*
7
10000
*
8
— Times
Data retention time
*
9
t
DRP
10 — — Years
Programming Wait time after SWE bit setting
*
1
x 1 — — μs
850 Notes 7 to 9 added
Notes: 7. Minimum number of times for which all characteristics
are guaranteed after rewriting (Guarantee range is 1 to
minimum value).
8. Reference value for 25°C (as a guideline, rewriting should
normally function up to this value).
9. Data retention characteristic when rewriting is performed
within the specification range, including the minimum value.
20.3.2 DC
Characteristics
Table 20.21 DC
Characteristics
853 Table 20.21 amended
VCC start voltage
*
5
VCC
START
— — 0.4 V
VCC rising edge
*
5
SVCC — — 10 ms/V
Item Symbol Min Typ MaxU nit
Test
Conditions
Note 5 added
Note: 5. Applies on condition that the RES pin is low level at
power on.