Datasheet

Section 17 ROM
Rev.7.00 Feb. 14, 2007 page 619 of 1108
REJ09B0089-0700
AC Characteristics
Table 17.20 AC Characteristics in Auto-Erase Mode
Conditions: V
CC
= 3.3 V ±0.3 V, V
SS
= 0 V, T
a
= 25°C ±5°C
Item Symbol Min Max Unit
Command write cycle t
nxtc
20 — μs
CE hold time t
ceh
0 — ns
CE setup time t
ces
0 — ns
Data hold time t
dh
50 — ns
Data setup time t
ds
50 — ns
Write pulse width t
wep
70 — ns
Status polling start time t
ests
1 — ms
Status polling access time t
spa
— 150 ns
Memory erase time t
erase
100 40000 ms
Erase setup time t
ens
100 — ns
Erase end setup time t
enh
100 — ns
WE rise time t
r
— 30 ns
WE fall time t
f
— 30 ns
CE
FWE
A
18
to A
0
I/O
5
to I/O
0
I/O
6
I/O
7
OE
WE
t
ests
t
erase
t
spa
t
dh
t
ds
t
f
t
r
t
wep
t
ens
t
enh
t
nxtc
t
nxtc
t
ceh
t
ces
Erase end identifi-
cation signal
Erase normal end
confirmation signal
H'20
H'20
H'00
Figure 17.27 Auto-Erase Mode Timing Waveforms