Datasheet

Section 27 Electrical Characteristics
Rev. 6.00 Mar. 18, 2010 Page 926 of 982
REJ09B0054-0600
Item Symbol Min Typ Max Unit
Test
Conditions
N1 ⎯ ⎯ 6
*
4
Times Programming Maximum programming
count
*
1
*
4
N2 ⎯ ⎯ 994
*
4
Erase Wait time after SWE1
bit setting
*
1
t
sswe
1 1 ⎯ µs
Wait time after ESU1
bit setting
*
1
t
sesu
100 100 ⎯ µs
Wait time after E1 bit
setting
*
1
*
5
t
se
10 10 100 ms
Wait time after E1 bit
clear
*
1
t
ce
10 10 ⎯ µs
Wait time after ESU1
bit clear
*
1
t
cesu
10 10 ⎯ µs
Wait time after EV1 bit
setting
*
1
t
sev
20 20 ⎯ µs
Wait time after H'FF
dummy write
*
1
t
sevr
2 2 ⎯ µs
Wait time after EV1 bit
clear
*
1
t
cev
4 4 ⎯ µs
Wait time after SWE1
bit clear
t
cswe
100 100 ⎯ µs
Maximum erase
count
*
1
*
5
N ⎯ ⎯ 100 Times
Notes: 1. Make each time setting in accordance with the program/program-verify flowchart or
erase/erase-verify flowchart.
2. Programming time per 128 bytes (Shows the total period for which the P1 bit in the
flash memory control register 1 (FLMCR1) is set. It does not include the program
verification time.)
3. Block erase time (Shows the total period for which the E1 bit in FLMCR1 is set. It does
not include the erase verification time.)
4. Maximum programming time value
t
p
(max) = Wait time after P1 bit setting (t
sp
) × maximum program count (N)
(t
sp30
+ t
sp10
) × 6 + (t
sp200
) × 994
5. Relationship among the maximum erase time (t
E
(max)), the wait time after E1 bit
setting (t
se
), and the maximum erase count (N) is shown below.
t
E
(max) = Wait time after E1 bit setting (t
se
) × maximum erase count (N)
6. The minimum times that all characteristics after reprogramming are guaranteed. (The
range between 1 and a minimum value is guaranteed.)
7. Reference value at 25°C. (Normally, it is a reference that rewriting is enabled up to this
value.)
8. Data hold characteristics are when reprogramming is performed within the range of
specifications including a minimum value.