Datasheet

Section 27 Electrical Characteristics
Rev. 6.00 Mar. 18, 2010 Page 906 of 982
REJ09B0054-0600
Item Symbol Min Typ Max Unit
Test
Conditions
Erasing Wait time after SWE1 bit clearing t
cswe
100 100 ⎯ µs
Maximum number of erases
*
1
*
5
N ⎯ ⎯ 100 Times
Notes: 1. Follow the program/erase algorithms when making the time settings.
2. Programming time per 128 bytes (Indicates the total time during which the P1 bit is set
in flash memory control register 1 (FLMCR1). Does not include the program-verify
time.)
3. Time to erase one block (Indicates the time during which the E1 bit is set in FLMCR1.
Does not include the erase-verify time.)
4. Maximum programming time
(t
P
(max) = Wait time after P1 bit setting (t
sp
) × maximum number of writes (N))
(t
sp30
+ t
sp10
) × 6 + (t
sp200
) × 994
5. For the maximum erase time (t
E
(max)), the following relationship applies between the
wait time after E1 bit setting (z) and the maximum number of erases (N):
t
E
(max) = Wait time after E1 bit setting (t
se
) × maximum number of erases (N)
6. The minimum times that all characteristics after rewriting are guaranteed. (A range
between 1 and minimum value is guaranteed.)
7. The reference value at 25°C. (Normally, it is a reference that rewriting is enabled up to
this value.)
8. Data hold characteristics when rewriting is performed within the range of specifications
including minimum value.