Datasheet

Section 27 Electrical Characteristics
Rev. 6.00 Mar. 18, 2010 Page 905 of 982
REJ09B0054-0600
27.4.6 Flash Memory Characteristics
Table 27.37 lists the flash memory characteristics.
Table 27.37 Flash Memory Characteristics
Conditions: V
CC
= 3.0 V to 5.5 V, AV
CC
= 3.0 V to 5.5 V, V
ref
= 3.0 V to AV
CC
,
V
SS
= AV
SS
= 0 V, T
a
= -20°C to +75°C (program/erase operating temperature range;
regular specifications), T
a
= –20°C to +75°C (program/erase operating temperature
range; wide-range specifications)
Item Symbol Min Typ Max Unit
Test
Conditions
Programming time
*
1
*
2
*
4
t
P
⎯ 10 200
ms/
128 bytes
Erase time
*
1
*
3
*
5
t
E
⎯ 100 1200 ms/block
Rewrite times N
WEC
100
*
6
10000
*
7
⎯ Times
Data holding time
*
8
t
DRP
10 ⎯ ⎯ Years
Programming Wait time after SWE1 bit setting
*
1
t
sswe
1 1 ⎯ μs
Wait time after PSU1 bit setting
*
1
t
spsu
50 50 ⎯ μs
Wait time after P1 bit setting
*
1
*
4
t
sp10
8 10 12 µs
t
sp30
28 30 32 μs 1 ≤ n ≤ 6
t
sp200
198 200 202 μs 7 ≤ n ≤ 1000
Wait time after P1 bit clearing
*
1
t
cp
5 5 ⎯ μs
Wait time after PSU1 bit clearing
*
1
t
cpsu
5 5 ⎯ μs
Wait time after PV1 bit setting
*
1
t
spv
4 4 ⎯ μs
Wait time after H'FF dummy write
*
1
t
spvr
2 2 ⎯ μs
Wait time after PV1 bit clearing
*
1
t
cpv
2 2 ⎯ μs
Wait time after SWE1 bit clearing t
cswe
100 100 ⎯ µs
N1 ⎯ ⎯ 6
*
4
Times
Maximum number of programming
operations
*
1
*
4
N2 ⎯ ⎯ 994
*
4
Erasing Wait time after SWE1 bit setting
*
1
t
sswe
1 1 ⎯ μs
Wait time after ESU1 bit setting
*
1
t
sesu
100 100 ⎯ μs
Wait time after E1 bit setting
*
1
*
5
t
se
10 10 100 ms
Wait time after E1 bit clearing
*
1
t
ce
10 10 ⎯ μs
Wait time after ESU1 bit clearing
*
1
t
cesu
10 10 ⎯ μs
Wait time after EV1 bit setting
*
1
t
sev
20 20 ⎯ μs
Wait time after H'FF dummy write
*
1
t
sevr
2 2 ⎯ μs
Wait time after EV1 bit clearing
*
1
t
cev
4 4 ⎯ μs