Datasheet

Section 27 Electrical Characteristics
Rev. 6.00 Mar. 18, 2010 Page 885 of 982
REJ09B0054-0600
27.3.6 Flash Memory Characteristics
Table 27.25 lists the flash memory characteristics.
Table 27.25 Flash Memory Characteristics
Conditions: V
CC
= 2.7 V to 3.6 V, AV
CC
= 2.7 V to 3.6 V, V
ref
= 2.7 V to AV
CC
,
V
SS
= AV
SS
= 0 V, V
CC
= 3.0 V to 3.6 V (Programming/erasing operating voltage
range), T
a
= –20°C to +50°C (Programming/erasing operating temperature range;
regular specifications, wide-range specifications)
Item Symbol Min Typ Max Unit
Test Conditions
Programming time
*
1
*
2
*
4
t
P
⎯ 10 200 ms/128 bytes
Erase time
*
1
*
3
*
5
t
E
⎯ 100 1200 ms/block
Reprogramming count N
WEC
100
*
6
10000
*
7
⎯ Times
Data hold time
*
8
t
DRP
10 ⎯ ⎯ year
Programming Wait time after SWE1 bit
setting
*
1
t
sswe
1 1 ⎯ µs
Wait time after PSU1 bit
setting
*
1
t
spsu
50 50 ⎯ µs
t
sp10
8 10 12 µs
t
sp30
28 30 32 µs 1 ≤ n ≤ 6
Wait time after P1 bit
setting
*
1
*
4
t
sp200
198 200 202 µs 7 ≤ n ≤ 1000
Wait time after P1 bit
clear
*
1
t
cp
5 5 ⎯ µs
Wait time after PSU1 bit
clear
*
1
t
cpsu
5 5 ⎯ µs
Wait time after PV1 bit
setting
*
1
t
spv
4 4 ⎯ µs
Wait time after H'FF
dummy write
*
1
t
spvr
2 2 ⎯ µs
Wait time after PV1 bit
clear
*
1
t
cpv
2 2 ⎯ µs
Wait time after SWE1 bit
clear
t
cswe
100 100 ⎯ µs
N1 ⎯ ⎯ 6
*
4
Times
Maximum programming
count
*
1
*
4
N2 ⎯ ⎯ 994
*
4