Datasheet

Section 27 Electrical Characteristics
Rev. 6.00 Mar. 18, 2010 Page 862 of 982
REJ09B0054-0600
27.2.6 Flash Memory Characteristics
Table 27.12 Flash Memory Characteristics
Conditions: V
CC
= 4.0 V to 5.5 V, AV
CC
= 4.0 V to 5.5 V, V
ref
= 4.0 V to AV
CC
,
V
SS
= AV
S
S = 0 V, T
a
= –20°C to +75°C (Programming/erasing operating
temperature range)
Item Symbol Min Typ Max Unit
Test
Conditions
Programming time
*
1
*
2
*
4
t
P
⎯ 40 200
ms/
128 bytes
Erase time
*
1
*
3
*
5
t
E
⎯ 20 1000 ms/block
Reprogramming count N
WEC
100
*
6
10000
*
7
⎯ Times
Data hold time
*
8
t
DRP
10 ⎯ ⎯ Year
Programming Wait time after SWE1 bit setting
*
1
t
sswe
1 1 ⎯ µs
Wait time after PSU1 bit setting
*
1
t
spsu
50 50 ⎯ µs
t
sp10
8 10 12 µs
t
sp30
28 30 32 µs 1 ≤ n ≤ 6
Wait time after P1 bit setting
*
1
*
4
t
sp200
198 200 202 µs 7 ≤ n ≤ 1000
Wait time after P1 bit clear
*
1
t
cp
5 5 ⎯ µs
Wait time after PSU1 bit clear
*
1
t
cpsu
5 5 ⎯ µs
Wait time after PV1 bit setting
*
1
t
spv
4 4 ⎯ µs
Wait time after H'FF dummy write
*
1
t
spvr
2 2 ⎯ µs
Wait time after PV1 bit clear
*
1
t
cpv
2 2 ⎯ µs
Wait time after SWE1 bit clear
*
1
t
cswe
100 100 ⎯ µs
N1 ⎯ ⎯ 6
*
4
Maximum programming count
*
1
*
4
N2 ⎯ ⎯ 994
*
4
Times
Erase Wait time after SWE1 bit setting
*
1
t
sswe
1 1 ⎯ µs
Wait time after ESU1 bit setting
*
1
t
sesu
100 100 ⎯ µs
Wait time after E1 bit setting
*
1
*
5
t
se
10 10 100 ms
Wait time after E1 bit clear
*
1
t
ce
10 10 ⎯ µs
Wait time after ESU1 bit clear
*
1
t
cesu
10 10 ⎯ µs
Wait time after EV1 bit setting
*
1
t
sev
20 20 ⎯ µs
Wait time after H'FF dummy write
*
1
t
sevr
2 2 ⎯ µs
Wait time after EV1 bit clear
*
1
t
cev
4 4 ⎯ µs
Wait time after SWE1 bit clear
*
1
t
cswe
100 100 ⎯ µs
Maximum erase count
*
1
*
5
N ⎯ ⎯ 100 Times