Datasheet

Section 20 Flash Memory (F-ZTAT Version)
Rev. 6.00 Mar. 18, 2010 Page 750 of 982
REJ09B0054-0600
V
CC
FWE
t
OSC1
min 0ms
t
MDS
t
MDS
t
MDS
t
RESW
MD2 to MD0
RES
SWE1 bit
Mode
change
*
1
Boot
mode
Mode
change
*
1
User
mode
User program mode User
mode
User program
mode
SWE1 set
SWE1
cleared
t
sswe
*
4
*
4
*
2
*
4
*
4
1.
2.
3.
4.
When entering boot mode or making a transition from boot mode to another mode, mode switching must be
carried out by means of RES input
When making a transition from boot mode to another mode, a mode programming setup time t
MDS
(min) of 200
ns is necessary with respect to RES clearance timing.
See sections
27.2.6, 27.3.6, 27.4.6, 27.5.6 and 27.6.6, Flash Memory Characteristics.
Wait time: 100 μs.
Period during which flash memory access is prohibited
(t
sswe
: Wait time after setting SWE1 bit)
*
2
Period during which flash memory can be programmed
(Execution of program in flash memory prohibited, and data reads other than verify operations prohibited)
Notes:
Wait time: Programming/ erasing possible
t
sswe
Wait time: Programming/ erasing possible
t
sswe
Wait time: Programming/ erasing possible
t
sswe
Wait time: Programming/ erasing possible
φ
Figure 20.16 Mode Transition Timing
(Example: Boot Mode • User Mode • User Program Mode)