Datasheet

Section 20 Flash Memory (F-ZTAT Version)
Rev. 6.00 Mar. 18, 2010 Page 715 of 982
REJ09B0054-0600
Section 20 Flash Memory (F-ZTAT Version)
The features of the flash memory are summarized below.
The block diagram of the flash memory is shown in figure 20.1.
20.1 Features
• Capacity
H8S/2239: 384 kbytes
H8S/2258: 256 kbytes
H8S/2238B: 256 kbytes
H8S/2238R: 256 kbytes
H8S/2227: 128 kbytes
• Programming/erase methods
The flash memory is programmed 128 bytes at a time. Erase is performed in single-block units.
The flash memory of the H8S/2239 is configured as follows: 64 kbytes × 5 blocks, 32 kbytes ×
1 block, and 4 kbytes × 8 blocks. The flash memory of the H8S/2258, H8S/2238B, and
H8S/2238R is configured as follows: 64 kbytes × 3 blocks, 32 kbytes × 1 block, and 4 kbytes ×
8 blocks. The flash memory of the H8S/2227 is configured as follows: 32 kbytes × 2 blocks,
28 kbytes × 1 block, 16 kbytes × 1 block, 8 kbytes × 2 blocks, and 1 kbyte × 4 blocks. To erase
the entire flash memory, each block must be erased in turn.
• Reprogramming capability
The flash memory can be reprogrammed for 100 times.
• Two programming modes
Boot mode
User program mode
On-board programming/erasing can be done in boot mode, in which the boot program built
into the chip is started to erase or program of the entire flash memory. In normal user program
mode, individual blocks can be erased or programmed.
• Automatic bit rate adjustment
For data transfer in boot mode, this LSI’s bit rate can be automatically adjusted to match the
transfer bit rate of the host.
• Programming/erasing protection
There are three protect modes, hardware, software, and error protect, which allow protected
status to be designated for flash memory program/erase operations.