Datasheet

Table Of Contents
Section 27 Electrical Characteristics (H8S/2215C)
Page 832 of 846 REJ09B0140-0900 Rev. 9.00
Sep 16, 2010
H8S/2215 Group
27.8 Flash Memory Characteristics
Table 27.11 Flash Memory Characteristics
Condition: V
CC
= PLLV
CC
= DrV
CC
= 3.0 V to 3.6 V, AV
CC
= 3.0 V to 3.6 V, V
ref
= 3.0 V to AV
CC
,
V
SS
= PLLV
SS
= DrV
SS
= AV
SS
= 0 V, φ = 16 MHz to 24 MHz, T
a
= –20°C to +75°C
(Programming/erasing operating temperature range)
Item Symbol Min. Typ. Max. Unit
Programming time*
1
*
2
*
4
t
P
10 200 ms/128 bytes
Erase time*
1
*
3
*
5
t
E
50 1000 ms/block
Reprogramming count N
WEC
100*
6
10,000*
7
— Times
Data retention time*
8
t
DRP
10 Years
Programming Wait time after PSU1 bit setting*
1
y 50 50 µs
Wait time after P1 bit setting*
1
*
4
z0 28 30 32 µs
z1 198 200 202 µs
z2 8 10 12 µs
Wait time after P1 bit clear*
1
α 5 5 µs
Wait time after PSU1 bit clear*
1
β 5 5 µs
Wait time after PV1 bit setting*
1
γ 4 4 µs
Wait time after H’FF dummy write*
1
ε 2 2 µs
Wait time after PV1 bit clear*
1
η 2 2 µs
Maximum programming count*
1
*
4
N1 6*
4
Times
N2 994*
4
Times
Common Wait time after SWE1 bit setting*
1
x 1 1 µs
Wait time after SWE1 bit clear*
1
θ 100 100 — µs
Erase Wait time after ESU1 bit setting*
1
y 100 100 µs
Wait time after E1 bit setting*
1
*
5
z 10 10 100 ms
Wait time after E1 bit clear*
1
α 10 10 µs
Wait time after ESU1 bit clear*
1
β 10 10 µs
Wait time after EV1 bit setting*
1
γ 20 20 µs
Wait time after H'FF dummy write*
1
ε 2 2 µs
Wait time after EV1 bit clear*
1
η 4 4 µs
Maximum erase count*
1
*
5
N 100 Times
Notes: 1. Make each time setting in accordance with the program/program-verify flowchart or
erase/erase-verify flowchart.