Datasheet

Table Of Contents
Section 26 Electrical Characteristics (H8S/2215T)
Page 806 of 846 REJ09B0140-0900 Rev. 9.00
Sep 16, 2010
H8S/2215 Group
Item Symbol Min. Typ. Max. Unit
Common Wait time after SWE1 bit setting
*
1
x 1 1 µs
Wait time after SWE1 bit clear
*
1
θ 100 100 — µs
Erase Wait time after ESU1 bit setting
*
1
y 100 100 µs
Wait time after E1 bit setting
*
1
*
5
z 10 10 100 ms
Wait time after E1 bit clear
*
1
α 10 10 µs
Wait time after ESU1 bit clear
*
1
β 10 10 µs
Wait time after EV1 bit setting
*
1
γ 20 20 µs
Wait time after H'FF dummy write
*
1
ε 2 2 µs
Wait time after EV1 bit clear
*
1
η 4 4 µs
Maximum erase count
*
1
*
5
N 100 Times
Notes: 1. Make each time setting in accordance with the program/program-verify flowchart or
erase/erase-verify flowchart.
2. Programming time per 128 bytes (Shows the total period for which the P-bit in the flash
memory control register (FLMCR1) is set. It does not include the programming
verification time).
3. Block erase time (Shows the total period for which the E1-bit FLMCR1 is set. It does not
include the erase verification time).
4. Maximum programming time value
t
p
(max.) = Wait time after P1 bit set (z) × maximum programming count (N1 + N2)
= (Z0 + Z2) × 6 + Z1 × 994
5. Maximum erasure time value
t
E
(max.) = Wait time after E1 bit set (z) × maximum erasure count (N)2
6. Minimum number of times for which all characteristics are guaranteed after rewriting
(Guarantee range is 1 to minimum value).
7. Reference value for 25°C (as a guideline, rewriting should normally function up to this
value).
8. Data retention characteristic when rewriting is performed within the specification range,
including the minimum value.
26.9 Usage Note
General Notice during Design for Printed Circuit Board: Measures for radiation noise caused
by the transient current in this LSI should be taken into consideration. The examples of the
measures are shown below.
To use a multilayer printed circuit board which includes layers for Vcc and GND.
To mount by-pass capacitors (approximately 0.1 μF) between the Vcc and GND (Vss) pins,
and the PLLV
CC
and PLLGND pins, of this LSI.