Datasheet

Table Of Contents
Section 19 Flash Memory (F-ZTAT Version)
REJ09B0140-0900 Rev. 9.00 Page 627 of 846
Sep 16, 2010
H8S/2215 Group
Section 19 Flash Memory (F-ZTAT Version)
The features of the on-chip flash memory are summarized below. The block diagram of the flash
memory is shown in figure 19.1.
19.1 Features
Size
Product Category ROM Size ROM Addresses
H8S/2215 Group HD64F2215, HD64F2215U,
HD64F2215R, HD64F2215RU,
HD64F2215T, HD64F2215TU,
HD64F2215CU
256 kbytes H'000000 to H'03FFFF
(Modes 6 and 7)
Programming/erase methods
The flash memory is programmed 128 bytes at a time. Erase is performed in single-block
units. The flash memory is configured as follows: four kbytes × eight blocks, 32 kbytes × 1
block, 64 kbytes × 3 and blocks. To erase the entire flash memory, each block must be
erased in turn.
Reprogramming capability
Flash memory can be reprogrammed a minimum of 100 times.
Two flash memory operating modes
Boot mode (SCI boot mode: HD64F2215, HD64F2215R, HD64F2215T. USB boot mode:
HD64F2215U, HD64F2215RU, HD64F2215TU, HD64F2215CU)
User program mode
On-board programming/erasing can be done in boot mode in which the boot program built
into the chip is started for erase or programming of the entire flash memory. In normal user
program mode, individual blocks can be erased or programmed.
Automatic bit rate adjustment (SCI boot mode)
With data transfer in SCI boot mode, this LSI’s bit rate can be automatically adjusted to
match the transfer bit rate of the host.
Programming/erasing protection
Sets hardware protection, software protection, and error protection against flash memory
programming/erasing.
Programmer mode
Flash memory can be programmed/erased in programmer mode, using a PROM
programmer, as well as in on-board programming mode.
ROMF252A_010020020100