Datasheet

Table Of Contents
Section 27 Electrical Characteristics (H8S/2215C)
REJ09B0140-0900 Rev. 9.00 Page 833 of 846
Sep 16, 2010
H8S/2215 Group
2. Programming time per 128 bytes (Shows the total period for which the P-bit in the flash
memory control register (FLMCR1) is set. It does not include the programming
verification time).
3. Block erase time (Shows the total period for which the E1-bit FLMCR1 is set. It does not
include the erase verification time).
4. Maximum programming time value
t
p
(max.) = Wait time after P1 bit set (z) × maximum programming count (N1 + N2)
= (Z0 + Z2) × 6 + Z1 × 994
5. Maximum erasure time value
t
E
(max.) = Wait time after E1 bit set (z) × maximum erasure count (N)2
6. Minimum number of times for which all characteristics are guaranteed after rewriting
(Guarantee range is 1 to minimum value).
7. Reference value for 25°C (as a guideline, rewriting should normally function up to this
value).
8. Data retention characteristic when rewriting is performed within the specification range,
including the minimum value.