Datasheet

Section 26 Electrical Characteristics (H8S/2215T)
REJ09B0140-0900 Rev. 9.00 Page 805 of 846
Sep 16, 2010
H8S/2215 Group
26.7 D/A Conversion Characteristics
Table 26.10 lists the D/A conversion characteristics.
Table 26.10 D/A Conversion Characteristics
Conditions: V
CC
= PLLV
CC
= DrV
CC
= 3.0 V to 3.6 V, AV
CC
= 3.0 V to 3.6 V, V
ref
= 3.0 V to AV
CC
,
V
SS
= PLLV
SS
= DrV
SS
= AV
SS
= 0 V, φ = 16 MHz, 24 MHz, T
a
= –20°C to +75°C
(regular specifications), T
a
= –40°C to +85°C (wide-range specifications)
Item Min. Typ. Max. Unit Test Condition
Resolution 8 8 8
Conversion time — — 10 µs Load capacitance = 20 pF
Absolute accuracy — ±2.0 ±3.0 LSB Load capacitance = 2 MΩ
— — ±2.0 LSB Load capacitance = 4 MΩ
26.8 Flash Memory Characteristics
Table 26.11 Flash Memory Characteristics
Conditions: V
CC
= PLLV
CC
= DrV
CC
= 3.0 V to 3.6 V, AV
CC
= 3.0 V to 3.6 V, V
ref
= 3.0 V to AV
CC
,
V
SS
= PLLV
SS
= DrV
SS
= AV
SS
= 0 V, φ = 16 MHz, 24 MHz, T
a
= –20°C to +75°C
(Programming/erasing operating temperature range)
Item Symbol Min. Typ. Max. Unit
Programming time
*
1
*
2
*
4
t
P
— 10 200 ms/128 bytes
Erase time
*
1
*
3
*
5
t
E
— 50 1000 ms/block
Reprogramming count N
WEC
100
*
6
10,000
*
7
— Times
Data retention time
*
8
t
DRP
10 — — Years
Programming Wait time after PSU1 bit setting
*
1
y 50 50 — µs
Wait time after P1 bit setting
*
1
*
4
z0 28 30 32 µs
z1 198 200 202 µs
z2 8 10 12 µs
Wait time after P1 bit clear
*
1
α 5 5 — µs
Wait time after PSU1 bit clear
*
1
β 5 5 — µs
Wait time after PV1 bit setting
*
1
γ 4 4 — µs
Wait time after H’FF dummy write
*
1
ε 2 2 — µs
Wait time after PV1 bit clear
*
1
η 2 2 — µs
Maximum programming count
*
1
*
4
N1 — — 6
*
4
Times
N2 — — 994
*
4
Times