Datasheet

Table Of Contents
Section 25 Electrical Characteristics (H8S/2215R)
REJ09B0140-0900 Rev. 9.00 Page 779 of 846
Sep 16, 2010
H8S/2215 Group
25.7 D/A Conversion Characteristics
Table 25.10 lists the D/A conversion characteristics.
Table 25.10 D/A Conversion Characteristics
Condition A: V
CC
= PLLV
CC
= DrV
CC
= 2.7 V to 3.6 V, AV
CC
= 2.7 V to 3.6 V, V
ref
= 2.7 V to AV
CC
,
V
SS
= PLLV
SS
= DrV
SS
= AV
SS
= 0 V, φ = 13 MHz to 16 MHz, T
a
= –20°C to +75°C
(regular specifications), T
a
= –40°C to +85°C (wide-range specifications)
Condition B: V
CC
= PLLV
CC
= DrV
CC
= 3.0 V to 3.6 V, AV
CC
= 3.0 V to 3.6 V, V
ref
= 3.0 V to AV
CC
,
V
SS
= PLLV
SS
= DrV
SS
= AV
SS
= 0 V, φ = 13 MHz to 24 MHz, T
a
= –20°C to +75°C
(regular specifications), T
a
= –40°C to +85°C (wide-range specifications)
Condition A and B
Item Min. Typ. Max. Unit Test Condition
Resolution 8 8 8 bits
Conversion time 10 µs Load capacitance = 20 pF
Absolute accuracy ±2.0 ±3.0 LSB Load capacitance = 2 MΩ
±2.0 LSB Load capacitance = 4 MΩ
25.8 Flash Memory Characteristics
Table 25.11 Flash Memory Characteristics
Condition A: V
CC
= PLLV
CC
= DrV
CC
= 3.0 V to 3.6 V, AV
CC
= 2.7 V to 3.6 V, V
ref
= 2.7 V to AV
CC
,
V
SS
= PLLV
SS
= DrV
SS
= AV
SS
= 0 V, φ = 13 MHz to 16 MHz, T
a
= –20°C to +75°C
(Programming/erasing operating temperature range)
Condition B: V
CC
= PLLV
CC
= DrV
CC
= 3.0 V to 3.6 V, AV
CC
= 3.0 V to 3.6 V, V
ref
= 3.0 V to AV
CC
,
V
SS
= PLLV
SS
= DrV
SS
= AV
SS
= 0 V, φ = 13 MHz to 24 MHz, T
a
= –20°C to +75°C
(Programming/erasing operating temperature range)
Item Symbol Min. Typ. Max. Unit
Programming time
*
1
*
2
*
4
t
P
10 200 ms/128 bytes
Erase time
*
1
*
3
*
5
t
E
50 1000 ms/block
Reprogramming count N
WEC
100
*
6
10,000
*
7
Times
Data retention time
*
8
t
DRP
10 Years