Datasheet

Section 22 Electrical Characteristics
Rev.7.00 Dec. 24, 2008 Page 683 of 698
REJ09B0074-0700
22.7 Flash Memory Characteristics
Table 22.10 lists the flash memory characteristics.
Table 22.10 Flash Memory Characteristics
Conditions: V
CC
= PLLV
CC
= DrV
CC
= 3.0 V to 3.6 V, Vref = 2.7 V to V
CC
,
V
SS
= PLLV
SS
= DrV
SS
= 0 V,
T
a
= –20 to +75°C (Programming/erasing operating temperature range)
Item Symbol Min. Typ. Max. Unit
Programming time*
1
*
2
*
4
t
P
— 10 200 ms/128 bytes
Erase time*
1
*
3
*
5
t
E
— 50 1000 ms/block
Reprogramming count N
WEC
100*
6
10000*
7
— Times
Data retention time*
8
t
DRP
10 — — Years
Programming Wait time after PSU1 bit setting*
1
y 50 50 — µs
Wait time after P1 bit setting*
1
*
4
z0 28 30 32 µs
z1 198 200 202 µs
z2 8 10 12 µs
Wait time after P1 bit clear*
1
α 5 5 — µs
Wait time after PSU1 bit clear*
1
β 5 5 — µs
Wait time after PV1 bit setting*
1
γ 4 4 — µs
Wait time after H’FF dummy write*
1
ε 2 2 — µs
Wait time after PV1 bit clear*
1
η 2 2 — µs
Maximum programming count*
1
*
4
N1 — — 6*
4
Times
N2 — — 994*
4
Times
Common Wait time after SWE1 bit setting*
1
x 1 1 — µs
Wait time after SWE1 bit clear*
1
θ 100 100 — µs
Erase Wait time after ESU1 bit setting*
1
y 100 100 — µs
Wait time after E1 bit setting*
1
*
5
z 10 10 100 ms
Wait time after E1 bit clear*
1
α 10 10 — µs
Wait time after ESU1 bit clear*
1
β 10 10 — µs
Wait time after EV1 bit setting*
1
γ 20 20 — µs
Wait time after H'FF dummy write*
1
ε 2 2 — µs
Wait time after EV1 bit clear*
1
η 4 4 — µs
Maximum erase count*
1
*
5
N — — 100 Times
Notes: 1. Make each time setting in accordance with the program/program-verify flowchart or
erase/erase-verify flowchart.
2. Programming time per 128 bytes (Shows the total period for which the P-bit in the flash
memory control register (FLMCR1) is set. It does not include the programming
verification time.)