Datasheet

Section 22 Electrical Characteristics
Rev.7.00 Dec. 24, 2008 Page 684 of 698
REJ09B0074-0700
3. Block erase time (Shows the total period for which the E1-bit FLMCR1 is set. It does not
include the erase verification time.)
4. Maximum programming time value
t
p
(max.) = Wait time after P1 bit set (z) × maximum programming count (N1 + N2)
= (Z0 + Z2) × 6 + Z1 × 994
5. Maximum erasure time value
t
E
(max.) = Wait time after E1 bit set (z) × maximum erasure count (N)
6. Minimum times that guarantee all characteristics after programming. (The guaranteed
range is 1 to the minimum value.)
7. Reference value when the temperature is 25°C. (It is reference that reprogramming is
normally enabled up to this value.)
8. Data hold characteristics when reprogramming is performed within the range of
specifications including the minimum value.
22.8 Usage Note
General Notice during Design for Printed Circuit Board: Measures for radiation noise caused
by the transient current in this LSI should be taken into consideration. The examples of the
measures are shown below.
• To use a multilayer printed circuit board which includes layers for Vcc and GND.
• To mount by-pass capacitors (approximately 0.1 μF) between the Vcc and GND (Vss) pins,
and the PLLVcc and PLLGND pins, of this LSI.
Characteristics of F-ZTAT and Masked ROM Versions: Though the F-ZTAT version and the
masked ROM version satisfy electrical characteristics described in this manual, the actual value of
electrical characteristics, operating margin, and noise margin may differ due to the differences of
production process, on-chip ROM, and layout patterning.
When the system has been evaluated with the F-ZTAT version, the equivalent evaluation should
be implemented to the masked ROM version when shifted to the masked ROM version.