Datasheet

Section 17 Flash Memory (F-ZTAT Version)
Rev.7.00 Dec. 24, 2008 Page 553 of 698
REJ09B0074-0700
Section 17 Flash Memory (F-ZTAT Version)
The features of the on-chip flash memory are summarized below. The block diagram of the flash
memory is shown in figure 17.1.
17.1 Features
• Size:
Product Class ROM Size ROM Address
H8S/2218 Group HD64F2218, HD64F2218U
HD64F2218CU
128 kbytes H'000000 to H'01FFFF
(Modes 6 and 7)
HD64F2217CU 64 kbytes H'000000 to H'00FFFF
(Modes 6 and 7)
H8S/2212 Group HD64F2212, HD64F2212U
HD64F2212CU
128 kbytes H'000000 to H'01FFFF
(Mode 7)
HD64F2211, HD64F2211U
HD64F2211CU
64 kbytes H'000000 to H'00FFFF
(Mode 7)
HD64F2210CU 32 kbytes H'000000 to H'007FFF
(Mode 7)
• Programming/erase methods
⎯ The flash memory is programmed 128 bytes at a time. Erase is performed in single-block
units. The flash memory is configured as follows: 32 kbytes × 2 blocks, 28 kbytes × 1
block, 16 kbytes × 8 blocks, 8 kbytes × 1 block, and 1 kbyte × 4 blocks. To erase the entire
flash memory, each block must be erased in turn.
• Reprogramming capability
⎯ Flash memory can be reprogrammed a minimum of 100 times.
• Two flash memory operating modes
⎯ Boot mode
SCI boot mode: HD64F2218, HD64F2212, and HD64F2211
USB boot mode: HD64F2218U, HD64F2218CU, HD64F2217CU, HD64F2212U,
HD64F2212CU, HD64F2211U, HD64F2211CU and HD64F2210CU
⎯ User program mode
On-board programming/erasing can be done in boot mode in which the boot program built
into the chip is started for erase or programming of the entire flash memory. In normal user
program mode, individual blocks can be erased or programmed.