Datasheet

ROM1250A_000020030700 Rev. 3.00, 03/04, page 611 of 830
Section 20 Flash Memory (0.18-µm F-ZTAT Version)
The flash memory has the following features. Figure 20.1 shows a block diagram of the flash
memory.
20.1 Features
• Size
Product Classification ROM Size ROM Address
H8S/2168 HD64F2168 256 kbytes H'000000 to H'03FFFF
H8S/2167 HD64F2167 384 kbytes H'000000 to H'05FFFF
H8S/2166 HD64F2166 512 kbytes H'000000 to H'07FFFF
• Two flash-memory MATs according to LSI initiation mode
The on-chip flash memory has two memory spaces in the same address space (hereafter
referred to as memory MATs). The mode setting in the initiation determines which memory
MAT is initiated first. The MAT can be switched by using the bank-switching method after
initiation.
 The user memory MAT is initiated at a power-on reset in user mode: 256 kbytes
(H8S/2168), 384 kbytes (H8S/2167), 512 kbytes (H8S/2166)
 The user boot memory MAT is initiated at a power-on reset in user boot mode: 8 kbytes
• Programming/erasing interface by the download of on-chip program
This LSI has a dedicated programming/erasing program. After downloading this program to
the on-chip RAM, programming/erasing can be performed by setting the argument parameter.
• Programming/erasing time
The flash memory programming time is 3 ms (typ) in 128-byte simultaneous programming and
approximately 25 µs per byte. The erasing time is 1000 ms (typ) per 64-kbyte block.
• Number of programming
The number of flash memory programming can be up to 100 times at the minimum. (The value
ranged from 1 to 100 is guaranteed.)
• Three on-board programming modes
 Boot mode
This mode is a program mode that uses an on-chip SCI interface. The user MAT and user
boot MAT can be programmed. This mode can automatically adjust the bit rate between
host and this LSI.
 User program mode
The user MAT can be programmed by using the optional interface.