Datasheet

Section 27 Electrical Characteristics
Rev. 3.00 Mar 21, 2006 page 723 of 788
REJ09B0300-0300
Notes: 1. Set the times according to the program/erase algorithms.
2. Programming time per 128 bytes (Shows the total period for which the P-bit in FLMCR1
is set. It does not include the programming verification time.)
3. Block erase time (Shows the total period for which the E-bit in FLMCR1 is set. It does
not include the erase verification time.)
4. Maximum programming time (t
P
(max))
t
P
(max) = (wait time after P-bit setting (z1) + (z3)) × 6
+ wait time after P-bit setting (z2) × ((N) – 6)
5. The maximun number of writes (N) should be set according to the actual set value of
z1, z2 and z3 to allow programming within the maximum programming time (t
P
(max)).
The wait time after P-bit setting (z1, z2, and z3) should be alternated according to the
number of writes (n) as follows:
1 ≤ n ≤ 6 z1 = 30µs, z3 = 10µs
7 ≤ n ≤ 1000 z2 = 200µs
6. Maximum erase time (t
E
(max))
t
E
(max) = Wait time after E-bit setting (z) × maximum erase count (N)
7. The maximum number of erases (N) should be set according to the actual set value of z
to allow erasing within the maximum erase time (t
E
(max)).
8. Minimum number of times for which all characteristics are guaranteed after rewriting
(Guarantee range is 1 to minimum value).
9. Reference value for 25°C (as a guideline, rewriting should normally function up to this
value).
10.Data retention characteristic when rewriting is performed within the specification range,
including the minimum value.