Datasheet

Section 27 Electrical Characteristics
Rev. 3.00 Mar 21, 2006 page 705 of 788
REJ09B0300-0300
Table 27.2 DC Characteristics (2)
Conditions: V
CC
= 2.7 V to 3.6 V
*
5
, V
CC
B = 2.7 V to 5.5 V, AV
CC
*
1
= 2.7 V to 3.6 V,
AV
ref
*
1
= 2.7 V to AV
CC
, V
SS
= AV
SS
*
1
= 0 V, T
a
= –20 to +75°C
Item Symbol Min Typ Max Unit
Test
Conditions
RES 10.0
STBY, NMI, MD1,
MD0
——1.0
V
in
= 0.5 to
V
CC
– 0.5 V
Input
leakage
current
Port 7
I
in
——1.0
µA
V
in
= 0.5 to
AV
CC
– 0.5 V
Three-state
leakage
current (off
state)
Ports 1 to 6, 8, 9, A
*
4
,
and B (Ports C to G
are added in the
H8S/2160B and
H8S/2161B.)
I
TSI
——1.0µAV
in
= 0.5 to
V
CC
– 0.5 V,
V
in
= 0.5 to
V
CC
B – 0.5 V
Ports 1 to 3 5 150
Ports 6 (P6PUE = 0)
and B
(Ports C to F are
added in the
H8S/2160B and
H8S/2161B.)
30 300
Ports A
*
4
30 600
Input
pull-up
MOS
current
Port 6 (P6PUE = 1)
–I
P
3 100
µA V
in
= 0 V,
V
CC
= 2.7 V
to 3.6 V
V
CC
B = 2.7 V
to 5.5 V
RES 80 pF
NMI 50 pF
P52, P97, P42,
P86, PA7 to PA2
(4)
20 pF
Input
capacitance
Input pins except (4)
above
(Ports C to G are
added in the
H8S/2160B and
H8S/2161B.)
C
in
15 pF
V
in
= 0 V,
f = 1 MHz,
T
a
= 25°C