Datasheet

Rev. 3.00 Mar 21, 2006 page xviii of liv
Item Page Revision (See Manual for Details)
27.1.6 Flash Memory
Characteristics
Table
27.15 Flash
Memory
Characteristics
722 Table 28.15 amended
Item Symbol Min Typ Max Unit
Test
Condition
Programming time
*
1
*
2
*
4
t
P
— 10 200 ms/
128 bytes
Erase time
*
1
*
3
*
6
t
E
— 100 1200 ms/block
Reprogramming count N
WEC
100
*
8
10,000
*
9
— times
Data retention time
*
10
t
DRP
10 — — Years
723 Notes 8 to 10 added
Notes:
8. Minimum number of times for which all characteristics
are guaranteed after rewriting (Guarantee range is 1 to
minimum value).
9. Reference value for 25°C (as a guideline, rewriting should
normally function up to this value).
10. Data retention characteristic when rewriting is performed
within the specification range, including the minimum value.
27.2.2 DC
Characteristics
Table
27.17 DC
Characteristics (5)
736 Table 27.17 (5) amended
Item Symbol Min Typ Max Unit
Test
Conditions
(1) V
T
–
V
CC
× 0.2
V
CC
B × 0.2
—— V
V
T
+
——V
CC
× 0.7
V
CC
B × 0.7
Schmitt
trigger input
voltage
P67 to P60 (KWUL
= 00)
*
2
*
6
,
KIN15 to KIN8
*
7
*
8
,
IRQ2 to IRQ0
*
3
,
IRQ5 to IRQ3
V
T
+
– V
T
–
V
CC
× 0.05
V
CC
B × 0.05
— —
27.2.3 AC
Characteristics
Table
27.23 Timing of
On-Chip Peripheral
Modules (1)
752 Table 27.23 (1) amended
(Before) t
cscyc
→ (After) t
Scyc
27.2.7 Usage Notes
Figure
27.5
Connection of VCL
Capacitor
761 Figure 27.5 amended
< Product with internal step-down function >
HD64F2145B
HD64F2148B