Datasheet

Section 23 ROM
Rev. 3.00 Mar 21, 2006 page 603 of 788
REJ09B0300-0300
Section 23 ROM
This LSI has an on-chip flash memory. The features of the flash memory are summarized below.
A block diagram of the flash memory is shown in figure 23.1.
23.1 Features
• Size
Product Classification RAM Capacitance RAM Address
H8S/2161B 128 kbytes H'000000–H'01FFFF (mode 2)
H'0000–H'DFFF (mode 3)
H8S/2160B 64 kbytes H'000000–H'00FFFF (mode 2)
H'0000–H'DFFF (mode 3)
H8S/2141B 128 kbytes H'000000–H'01FFFF (mode 2)
H'0000–H'DFFF (mode 3)
H8S/2140B 64 kbytes H'000000–H'00FFFF (mode 2)
H'0000–H'DFFF (mode 3)
H8S/2145B 256 kbytes H'000000–H'03FFFF (mode 2)
H'0000–H'DFFF (mode 3)
H8S/2148B 128 kbytes H'000000–H'01FFFF (mode 2)
H'0000–H'DFFF (mode 3)
• Programming/erase methods
The flash memory is programmed 128 bytes at a time. Erase is performed in single-block units.
The flash memory is configured as follows:
 64-kbyte version: 8 kbytes × 2 blocks, 16 kbytes × 1 block, 28 kbytes × 1 block, and 1
kbyte × 4 blocks
 128-kbyte version: 32 kbytes × 2 blocks, 8 kbytes × 2 blocks, 16 kbytes × 1 block, 28
kbytes × 1 block, and 1 kbyte × 4 blocks
 256-kbyte version: 64 kbytes × 3 blocks, 32 kbytes × 1 block, and 4 kbytes × 8 blocks.
To erase the entire flash memory, each block must be erased in turn.
• Programming/erase time
It takes 10 ms (typ.) to program the flash memory 128 bytes at a time; 80 µs (typ.) per 1 byte.
Erasing one block takes 100 ms (typ.).
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