Datasheet

Section 26 Electrical Characteristics
Rev. 4.00 Sep 27, 2006 page 917 of 1130
REJ09B0327-0400
t
RSD2
φ
T
1
AS
*
A23 to A0,
IOS
*
T
2
t
AH
t
ACC3
t
RDS
D15 to D0
(read)
T
2
or T
3
t
AS
T
1
t
ASD
t
ASD
t
RDH
t
AD
RD
(read)
Note: * AS and IOS are the same pin. The function is selected by the IOSE bit in SYSCR.
Figure 26.13 Burst ROM Access Timing (Two-State Access)