Datasheet

Section 26 Electrical Characteristics
Rev. 4.00 Sep 27, 2006 page 908 of 1130
REJ09B0327-0400
Table 26.67 Flash Memory Characteristics (Programming/erasing operating range)
Conditions (5 V version): V
CC
= 4.0 V to 5.5 V,V
SS
= 0 V, T
a
= –20 to +75°C (regular
specifications), T
a
= –40 to +85°C (wide-range specifications)
(3 V version): V
CC
= 3.0 V to 3.6V, V
SS
= 0 V, T
a
= –20 to 75°C
Item Symbol Min Typ Max Unit
Test
Condition
Programming time
*
1
*
2
*
4
tP — 10 200 ms/
128 bytes
Erase time
*
1
*
3
*
6
tE — 100 1200 ms/
block
Reprogramming count N
WEC
100
*
8
10000
*
9
—Times
Data retention time
*
10
t
DRP
10 — — Years
Programming Wait time after SWE-bit setting
*
1
x1——µs
Wait time after PSU-bit setting
*
1
y50——µs
z1 28 30 32 µs 1 ≤ n ≤ 6Wait time after P-bit setting
*
1
*
4
z2 198 200 202 µs 7 ≤ n ≤ 1000
z3 8 10 12 µs Additional
writing
Wait time after P-bit clear
*
1
α 10 — — µs
Wait time after PSU-bit clear
*
1
β 10 — — µs
Wait time after PV-bit setting
*
1
γ 4— —µs
Wait time after dummy write
*
1
ε 2— —µs
Wait time after PV-bit clear
*
1
η 4— —µs
Wait time after SWE-bit clear
*
1
θ 100 — — µs
Maximum programming
count
*
1
*
4
*
5
N — — 1000 Times
Erase Wait time after SWE-bit setting
*
1
x1——µs
Wait time after ESU-bit setting
*
1
y 100 — — µs
Wait time after E-bit setting
*
1
*
6
z 10 — 100 ms
Wait time after E-bit clear
*
1
α 10 — — µs
Wait time after ESU-bit clear
*
1
β 10 — — µs
Wait time after EV-bit setting
*
1
γ 20 — — µs
Wait time after H'FF dummy
write
*
1
ε 2— —µs
Wait time after EV-bit clear
*
1
η 4— —µs
Wait time after SWE-bit clear
*
1
θ 100 — — µs
Maximum erase count
*
1
*
6
*
7
N — — 120 Times