Datasheet

Section 23 ROM (H8S/2148 F-ZTAT A-Mask Version, H8S/2147 F-ZTAT A-Mask Version, H8S/2144 F-ZTAT A-Mask Version)
Rev. 4.00 Sep 27, 2006 page 730 of 1130
REJ09B0327-0400
Do not set or clear the SWE bit during program execution in flash memory.
Wait for at least 100 µs after clearing the SWE bit before executing a program or reading data in
flash memory. When the SWE bit is set, data in flash memory can be rewritten, but when SWE =
1 the flash memory can only be read in program-verify or erase-verify mode. Flash memory
should only be accessed for verify operations (verification during programming/erasing). Do not
clear the SWE bit during a program, erase, or verify operation.
Do not use interrupts while flash memory is being programmed or erased.
All interrupt requests, including NMI, should be disabled when programming and erasing flash
memory to give priority to program/erase operations.
Do not perform additional programming. Erase the memory before reprogramming.
In on-board programming, perform only one programming operation on a 128-byte programming
unit block. In programmer mode, too, perform only one programming operation on a 128-byte
programming unit block. Programming should be carried out with the entire programming unit
block erased.
Before programming, check that the chip is correctly mounted in the PROM programmer.
Overcurrent damage to the device can result if the index marks on the PROM programmer socket,
socket adapter, and chip are not correctly aligned.
Do not touch the socket adapter or chip during programming.
Touching either of these can cause contact faults and write errors.
23.12 Note on Switching from F-ZTAT Version to Mask ROM Version
The mask ROM version does not have the internal registers for flash memory control that are
provided in the F-ZTAT version. Table 23.22 lists the registers that are present in the F-ZTAT
version but not in the mask ROM version. If a register listed in table 23.22 is read in the mask
ROM version, an undefined value will be returned. Therefore, if application software developed
on the F-ZTAT version is switched to a mask ROM version product, it must be modified to ensure
that the registers in table 23.22 have no effect
Table 23.22 Registers Present in F-ZTAT Version but Absent in Mask ROM Version
Register Abbreviation Address
Flash memory control register 1 FLMCR1 H'FF80
Flash memory control register 2 FLMCR2 H'FF81
Erase block register 1 EBR1 H'FF82
Erase block register 2 EBR2 H'FF83