Datasheet

Section 23 ROM (H8S/2148 F-ZTAT A-Mask Version, H8S/2147 F-ZTAT A-Mask Version, H8S/2144 F-ZTAT A-Mask Version)
Rev. 4.00 Sep 27, 2006 page 726 of 1130
REJ09B0327-0400
Notes on Use of Auto-Erase-Program Mode
• Auto-erase mode supports only entire memory erasing.
• Do not perform a command write during auto-erasing.
• Confirm normal end of auto-erasing by checking FO6. Alternatively, status read mode can also
be used for this purpose (FO7 status polling uses the auto-erase operation end identification
pin).
• The status polling FO6 and FO7 pin information is retained until the next command write.
Until the next command write is performed, reading is possible by enabling CE and OE.
23.10.7 Status Read Mode
• Status read mode is used to identify what type of abnormal end has occurred. Use this mode
when an abnormal end occurs in auto-program mode or auto-erase mode.
• The return code is retained until a command write for other than status read mode is
performed.
Table 23.18 AC Characteristics in Status Read Mode
Conditions: V
CC
= 3.3 V ±0.3 V, V
SS
= 0 V, T
a
= 25°C ±5°C
Item Symbol Min Max Unit
Command write cycle t
nxtc
20 — µs
CE hold time t
ceh
0 — ns
CE setup time t
ces
0 — ns
Data hold time t
dh
50 — ns
Data setup time t
ds
50 — ns
Write pulse width t
wep
70 — ns
OE output delay time t
oe
— 150 ns
Disable delay time t
df
— 100 ns
CE output delay time t
ce
— 150 ns
WE rise time t
r
— 30 ns
WE fall time t
f
— 30 ns