Datasheet

Section 23 ROM (H8S/2148 F-ZTAT A-Mask Version, H8S/2147 F-ZTAT A-Mask Version, H8S/2144 F-ZTAT A-Mask Version)
Rev. 4.00 Sep 27, 2006 page 725 of 1130
REJ09B0327-0400
23.10.6 Auto-Erase Mode
AC Characteristics
Table 23.17 AC Characteristics in Auto-Erase Mode
Conditions: V
CC
= 3.3 V ±0.3 V, V
SS
= 0 V, T
a
= 25°C ±5°C
Item Symbol Min Max Unit
Command write cycle t
nxtc
20 — µs
CE hold time t
ceh
0 — ns
CE setup time t
ces
0 — ns
Data hold time t
dh
50 — ns
Data setup time t
ds
50 — ns
Write pulse width t
wep
70 — ns
Status polling start time t
ests
1 — ms
Status polling access time t
spa
— 150 ns
Memory erase time t
erase
100 40000 ms
WE rise time t
r
— 30 ns
WE fall time t
f
— 30 ns
CE
FA17 to FA0
FO7 to FO0
FO6
FO7
OE
WE
t
ests
t
nxtc
t
nxtc
t
ces
t
ceh
t
dh
CL
in
DL
in
t
wep
FO0 to FO5 = 0
H'20 H'20
Erase normal end
confirmation signal
t
f
t
r
t
ds
t
spa
t
erase
(100 to 40000 ms)
Erase end identification
signal
Figure 23.21 Auto-Erase Mode Timing Waveforms