Datasheet

Section 23 ROM (H8S/2148 F-ZTAT A-Mask Version, H8S/2147 F-ZTAT A-Mask Version, H8S/2144 F-ZTAT A-Mask Version)
Rev. 4.00 Sep 27, 2006 page 717 of 1130
REJ09B0327-0400
23.10 Flash Memory Programmer Mode
23.10.1 Programmer Mode Setting
Programs and data can be written and erased in programmer mode as well as in the on-board
programming modes. In programmer mode, the on-chip ROM can be freely programmed using a
PROM programmer that supports Renesas Technology microcomputer device types with 128-
kbyte or 64-kbyte on-chip flash memory
*
. See section 23.10.10, Notes on Memory Programming
and section 23.11, Flash Memory Programming and Erasing Precautions, for notes on programmer
mode. Flash memory read mode, auto-program mode, auto-erase mode, and status read mode are
supported with these device types. In auto-program mode, auto-erase mode, and status read mode,
a status polling procedure is used, and in status read mode, detailed internal signals are output after
execution of an auto-program or auto-erase operation.
Table 23.10 shows programmer mode pin settings.
Note: * Use products of the H8S/2148 A-mask version, H8S/2147 A-mask version, and
H8S/2144 A-mask version (in either 5-V or 3-V version) with the writing voltage for
PROM programmer set to 3.3 V. Do not use products other than the A-mask version
with 3.3V PROM programmer setting.
Table 23.10 Programmer Mode Pin Settings
Pin Names Setting/External Circuit Connection
Mode pins: MD1, MD0 Low-level input to MD1, MD0
STBY pin High-level input (Hardware standby mode not set)
RES pin Power-on reset circuit
XTAL and EXTAL pins Oscillation circuit
Other setting pins: P97, P92, P91,
P90, P67
Low-level input to p92, p67, high-level input to P97,
P91, P90