Datasheet

Rev. 4.00 Sep 27, 2006 page xvii of xliv
Item Page Revision (See Manual for Details)
23.10.7 Status Read
Mode
Figure 23.22 Status
Read Mode Timing
Waveforms
727 Figure 23.22 amended
CE
OE
WE
t
ces
t
nxtc
t
nxtc
t
df
t
ces
t
dh
t
wep
t
wep
t
dh
t
oe
t
ce
t
nxtc
t
f
t
r
t
f
t
r
t
ceh
t
ds
t
ds
t
ceh
24.7 Subclock Input
Circuit
740 Note on Subclock Usage
Description added
25.12 Usage Notes 764 Section 25.12 added
799 Table 26.15 amended
Item Symbol Min Typ Max Unit
Test
Condition
Reprogramming count N
WEC
100
*
8
10000
*
9
— Times
Data retention time
*
10
t
DRP
10 — — Years
Programming Wait time after SWE-bit setting
*
1
x10——µs
26.2.6 Flash Memory
Characteristics
Table 26.15 Flash
Memory Characteristics
(Programming/erasing
operating range)
800 Notes 8 to 10 added
Notes:
8. Minimum number of times for which all
characteristics are guaranteed after rewriting (Guarantee range
is 1 to minimum value).
9. Reference value for 25°C (as a guideline, rewriting should
normally function up to this value).
10. Data retention characteristic when rewriting is performed
within the specification range, including the minimum value.
26.3.3 AC
Characteristics
Table 26.20 Clock
Timing
819
Table 26.20 amended
Condition A Condition B Condition C
20 MHz 16 MHz 10 MHz
Item Symbol Min Max Min Max Min Max Unit
Test
Conditions
Oscillation settling
time at reset
(crystal)
t
OSC1
10 — 10 — 20 — ms Figure 26.6
Oscillation settling
time in software
standby (crystal)
t
OSC2
8 — 8 — 8 — ms Figure 26.7
Table 26.25 I
2
C Bus
Timing
829 Table 26.25 amended
Ratings
Item Symbol Min Typ Max Unit Test Conditions Notes
SCL, SDA input
fall time
t
Sf
——300 ns Figure 26.28
SCL, SDA output
fall time
t
of
20 + 0.1 Cb — 250 ns
SCL, SDA input
spike pulse
elimination time
t
SP
——1t
cyc