Datasheet

Section 26 Electrical Characteristics
Rev. 4.00 Sep 27, 2006 page 844 of 1130
REJ09B0327-0400
4. In the H8S/2147N, P52/SCK0/SCL0 and P97/SDA0 are NMOS push-pull outputs.
An external pull-up resistor is necessary to provide high-level output from SCL0 and
SDA0 (ICE = 1).
In the H8S/2147N, P52/SCK0 and P97 (ICE = 0) high levels are driven by NMOS.
5. When IICS = 0, ICE = 0, and KBIOE = 0. Low-level output when the bus drive function
is selected is determined separately.
6. The upper limit of the port 6 applied voltage is V
CC
+0.3 V when CIN input is not
selected, and the lower of V
CC
+0.3 V and AV
CC
+0.3 V when CIN input is selected.
When a pin is in output mode, the output voltage is equivalent to the applied voltage.
7. The upper limit of the port A applied voltage is V
CC
B +0.3 V when CIN input is not
selected, and the lower of V
CC
B +0.3 V and AV
CC
+0.3 V when CIN input is selected.
When a pin is in output mode, the output voltage is equivalent to the applied voltage.
8. The port A characteristics depend on V
CC
B, and the other pins characteristics depend
on V
CC
.
9. Current dissipation values are for V
IH
min = V
CC
–0.5 V, V
CC
B –0.5 V, and V
IL
max =
0.5 V with all output pins unloaded and the on-chip pull-up MOSs in the off state.
10.The values are for V
RAM
≤ V
CC
< 3.0 V, V
IH
min = V
CC
× 0.9, V
CC
B × 0.9, and V
IL
max =
0.3 V.
11.For flash memory program/erase operations, the applicable ranges are V
CC
= 3.0 V to
3.6 V and Ta = 0 to +75°C.