Datasheet

Section 22 ROM (Mask ROM Version, H8S/2148 F-ZTAT, H8S/2147N F-ZTAT, H8S/2144 F-ZTAT, and H8S/2142 F-ZTAT)
Rev. 4.00 Sep 27, 2006 page 675 of 1130
REJ09B0327-0400
Table 22.14 AC Characteristics when Entering Another Mode from Memory Read Mode
Conditions: V
CC
= 5.0 V ±10%, V
SS
= 0 V, T
a
= 25°C ±5°C
Item Symbol Min Max Unit
Command write cycle t
nxtc
20 — µs
CE hold time t
ceh
0 — ns
CE setup time t
ces
0 — ns
Data hold time t
dh
50 — ns
Data setup time t
ds
50 — ns
Write pulse width t
wep
70 — ns
WE rise time t
r
— 30 ns
WE fall time t
f
— 30 ns
CE
FA17 to FA0
FO7 to FO0 H'XX
OE
WE
Other mode command writeMemory read mode
t
wep
t
ceh
t
dh
t
ds
t
nxtc
t
ces
Address stable
Data
t
f
t
r
Note: Do not enable WE and OE at the same time.
Figure 22.17 Timing Waveforms when Entering Another Mode from Memory Read Mode