Datasheet

Section 25 Electrical Characteristics
Rev. 4.00 Jun 06, 2006 page 797 of 1004
REJ09B0301-0400
25.5.6 Flash Memory Characteristics
Table 25.49 shows the flash memory characteristics.
Table 25.49 Flash Memory Characteristics (Programming/Erasing Operating Range)
Conditions (5-V version): V
CC
= 4.0 V to 5.5 V, V
SS
= 0 V, T
a
= –20 to +75°C (regular
specifications), T
a
= –40 to +85°C (wide-range specifications)
(3-V version): V
CC
= 3.0 V to 3.6 V, V
SS
= 0 V, T
a
= –20 to +75°C
Item Symbol Min Typ Max Unit
Test
Condition
Programming time
*
1
*
2
*
4
tP — 10 200
ms/
128 bytes
Erase time
*
1
*
3
*
6
tE — 100 1200 ms/block
Reprogramming count N
WEC
100
*
8
10000
*
9
— Times
Data retention time
*
10
t
DRP
10 ——Years
Programming Wait time after SWE-bit setting
*
1
x1——µs
Wait time after PSU-bit setting
*
1
y50——µs
z1 28 30 32 µs 1 ≤ n ≤ 6
z2 198 200 202 µs 7 ≤ n ≤ 1000
Wait time after P-bit setting
*
1
*
4
z3 8 10 12 µs
Additional
writing
Wait time after P-bit clear
*
1
α 5 ——µs
Wait time after PSU-bit clear
*
1
β 5 ——µs
Wait time after PV-bit setting
*
1
γ 4 ——µs
Wait time after dummy write
*
1
ε 2 ——µs
Wait time after PV-bit clear
*
1
η 4 ——µs
Wait time after SWE-bit clear
*
1
θ 100 ——µs
Maximum programming
count
*
1
*
4
*
5
N —— 1000 Times
Erase Wait time after SWE-bit setting
*
1
x1——µs
Wait time after ESU-bit setting
*
1
y 100 ——µs
Wait time after E-bit setting
*
1
*
6
z10— 100 ms
Wait time after E-bit clear
*
1
α 10 ——µs
Wait time after ESU-bit clear
*
1
β 10 ——µs
Wait time after EV-bit setting
*
1
γ 20 ——µs
Wait time after dummy write
*
1
ε 2 ——µs
Wait time after EV-bit clear
*
1
η 4 ——µs
Wait time after SWE-bit clear
*
1
θ 100 ——µs
Maximum erase count
*
1
*
6
*
7
N —— 120 Times