Datasheet

Section 25 Electrical Characteristics
Rev. 4.00 Jun 06, 2006 page 778 of 1004
REJ09B0301-0400
25.4.6 Flash Memory Characteristics
Table 25.38 shows the flash memory characteristics.
Table 25.38 Flash Memory Characteristics
Conditions (5-V version): V
CC
= 5.0 V ±10%, V
SS
= 0 V, T
a
= 0 to +75°C (regular specifications),
T
a
= 0 to +85°C (wide-range specifications)
(3-V version): V
CC
= 3.0 V to 3.6 V, V
SS
= 0 V, T
a
= 0 to +75°C
Item Symbol Min Typ Max Unit
Test
Condition
Programming time
*
1
*
2
*
4
tP — 10 200 ms/32 bytes
Erase time
*
1
*
3
*
6
tE — 100 1200 ms/block
Reprogramming count N
WEC
——100 Times
Programming Wait time after SWE-bit setting
*
1
x10——µs
Wait time after PSU-bit setting
*
1
y50——µs
Wait time after P-bit setting
*
1
*
4
z 150 — 200 µs
Wait time after P-bit clear
*
1
α 10 ——µs
Wait time after PSU-bit clear
*
1
β 10 ——µs
Wait time after PV-bit setting
*
1
γ 4 ——µs
Wait time after dummy write
*
1
ε 2 ——µs
Wait time after PV-bit clear
*
1
η 4 ——µs
Maximum programming
count
*
1
*
4
*
5
N ——1000 Times z = 200 µs
Erase Wait time after SWE-bit setting
*
1
x10——µs
Wait time after ESU-bit setting
*
1
y 200 ——µs
Wait time after E-bit setting
*
1
*
6
z5— 10 ms
Wait time after E-bit clear
*
1
α 10 ——µs
Wait time after ESU-bit clear
*
1
β 10 ——µs
Wait time after EV-bit setting
*
1
γ 20 ——µs
Wait time after dummy write
*
1
ε 2 ——µs
Wait time after EV-bit clear
*
1
η 5 ——µs
Maximum erase count
*
1
*
6
*
7
N ——120 Times z = 10 ms
Notes: 1. Set the times according to the program/erase algorithms.
2. Programming time per 32 bytes (Shows the total period for which the P-bit in the flash
memory control register (FLMCR1) is set. It does not include the programming
verification time.)