Datasheet

Section 22 ROM (H8S/2138 F-ZTAT A-Mask Version, H8S/2134 F-ZTAT A-Mask Version)

Rev. 4.00 Jun 06, 2006 page 668 of 1004

REJ09B0301-0400

accessed for verify operations (verification during programming/erasing). Do not clear the SWE

bit during a program, erase, or verify operation.

Do not use interrupts while flash memory is being programmed or erased: All interrupt

requests, including NMI, should be disabled when programming and erasing flash memory to give

priority to program/erase operations.

Do not perform additional programming. Erase the memory before reprogramming. In on-

board programming, perform only one programming operation on a 128-byte programming unit

block. In programmer mode, too, perform only one programming operation on a 128-byte

programming unit block. Programming should be carried out with the entire programming unit

block erased.

Before programming, check that the chip is correctly mounted in the PROM programmer.

Overcurrent damage to the device can result if the index marks on the PROM programmer socket,

socket adapter, and chip are not correctly aligned.

Do not touch the socket adapter or chip during programming. Touching either of these can

cause contact faults and write errors.

22.12 Note on Switching from F-ZTAT Version to Mask ROM Version

The mask ROM version dose not have the internal register for flash memory control that are

provided in the F-ZTAT version. Table 22.22 lists the registers that are present in the F-ZTAT

version but not in the mask ROM version. If a register listed in table 22.22 is read in the mask

ROM version, an undefined value will be returned. Therefore, if application software developed

on the F-ZTAT version is switched to a mask ROM version products, it must be modified to