Datasheet

Section 22 ROM (H8S/2138 F-ZTAT A-Mask Version, H8S/2134 F-ZTAT A-Mask Version)
Rev. 4.00 Jun 06, 2006 page 658 of 1004
REJ09B0301-0400
Table 22.13 AC Characteristics in Memory Read Mode
Conditions: V
CC
= 3.3 V ±0.3 V, V
SS
= 0 V, T
a
= 25°C ±5°C
Item Symbol Min Max Unit
Command write cycle t
nxtc
20 — µs
CE hold time t
ceh
0 — ns
CE setup time t
ces
0 — ns
Data hold time t
dh
50 — ns
Data setup time t
ds
50 — ns
Write pulse width t
wep
70 — ns
WE rise time t
r
— 30 ns
WE fall time t
f
— 30 ns
CE
FA17 to FA0
FO7 to FO0 Data
OE
WE
Command write
t
wep
t
ceh
t
dh
t
ds
t
f
t
r
t
nxtc
Note: Data is latched on the rising edge of WE.
t
ces
Memory read mode
Address stable
Data
Figure 22.16 Memory Read Mode Timing Waveforms after Command Write