Datasheet

Section 21 ROM (Mask ROM Version, H8S/2138 F-ZTAT, H8S/2134 F-ZTAT, and H8S/2132 F-ZTAT)

Rev. 4.00 Jun 06, 2006 page 622 of 1004

REJ09B0301-0400

Do not set or clear the SWE bit during program execution in flash memory: Clear the SWE

bit before executing a program or reading data in flash memory. When the SWE bit is set, data in

flash memory can be rewritten, but flash memory should only be accessed for verify operations

(verification during programming/erasing).

Do not use interrupts while flash memory is being programmed or erased: All interrupt

requests, including NMI, should be disabled to give priority to program/erase operations.

Do not perform additional programming. Erase the memory before reprogramming. In on-

board programming, perform only one programming operation on a 32-byte programming unit

block. In programmer mode, too, perform only one programming operation on a 128-byte

programming unit block. Programming should be carried out with the entire programming unit

block erased.

Before programming, check that the chip is correctly mounted in the PROM programmer.

Overcurrent damage to the device can result if the index marks on the PROM programmer socket,

socket adapter, and chip are not correctly aligned.

Do not touch the socket adapter or chip during programming. Touching either of these can

cause contact faults and write errors.

21.12 Note on Switching from F-ZTAT Version to Mask ROM Version

The mask ROM version dose not have the internal registers for flash memory control that are

provided in the F-ZTAT version. Table 21.22 lists the registers that are present in the F-ZTAT

version but not in the mask ROM version. If a register listed in table 21.22 is read in the mask

ROM version, an undefined value will be returned. Therefore, if application software developed

on the F-ZTAT version is switched to a mask ROM version product, it must be modified to ensure