Datasheet

Rev. 4.00 Jun 06, 2006 page xii of liv
Item Page Revision (See Manual for Details)
25.3.2 DC
Characteristics
Table 25.16 DC
Characteristics (3)
740 Table 25.16 (3) amended
Item Symbol Min Typ Max Unit
Test
Conditions
Output high
voltage
V
OH
V
CC
–0.5 —— VI
OH
= –200 µAAll output pins
(except P97, and
P52
*
4
)
*
5
V
CC
–1.0 —— VI
OH
= –1 mA
P97, P52
*
4
0.5 —— VI
OH
= –200 µA,
V = 2.7 to
3.5 V
CC
742 Note *4 amended
Note: 4. P52/SCK0/SCL0 and P97/SDA0 are NMOS push-pull
outputs
in H8S/2138. ... P52/SCK0 and P97 (ICE = 0) high
levels are driven by NMOS
in H8S/2138.
756 Table 25.27 amended
Item Symbol Min Typ Max Unit
Test
Condition
Reprogramming count N
WEC
100
*
8
10000
*
9
— Times
Data retention time
*
10
t
DRP
10 — — Years
25.3.6 Flash Memory
Characteristics
Table 25.27 Flash
Memory Characteristics
(Programming/Erasing
Operating Range)
757 Notes 8 to 10 added
Notes:
8. Minimum number of times for which all
characteristics are guaranteed after rewriting (Guarantee
range is 1 to minimum value).
9. Reference value for 25C° (as a guide line, rewriting should
normally function up to this value).
10. Data retention characteristics when rewriting is performed
within the specification range, including the minimum value.
25.4.2 DC
Characteristics
Table 25.29 DC
Characteristics (1)
761 Table 25.29 (1) amended
Item Symbol Min Typ Max Unit
Test
Conditions
Three-state
leakage
current
(off state)
Ports 1 to 6, 8, 9 I
TSI
 ——1.0 µA V
in
= 0.5 to
V
CC
–0.5 V
Ports 1 to 3 –I
P
50 — 300 µAInput pull-up
MOS current
Port 6 60 — 500 µA
V = 0 V, V
CC
= 5 V ±10%
in
Table 25.29 DC
Characteristics (3)
766 Note *5 added to test conditions for input pull-up MOS current
V
in
= 0 V, V
CC
= 2.7 V
*
5
to 3.6 V
25.5.2 DC
Characteristics
Table 25.40 DC
Characteristics (1)
782 Table 25.40 (1) amended
Item Symbol Min Typ Max Unit
Test
Conditions
Ports 1 to 3 –I
P
30 — 300 µAInput
pull-up
MOS
current
Port 6 60 — 600 µA
V
in
= 0 V, V
CC
= 5 V ±10%