Datasheet

Section 26 Electrical Characteristics
Rev. 3.00 Sep. 28, 2009 Page 897 of 910
REJ09B0350-0300
26.5 Flash Memory Characteristics
Table 26.13 lists the flash memory characteristics.
Table 26.13 Flash Memory Characteristics
Conditions: V
CC
= 3.0 V to 3.6 V, AV
CC
= 3.0 V to 3.6 V, Avref = 3.0 V to AV
CC
,
V
SS
= AV
SS
= 0 V
Ta = 0°C to +75°C (operating temperature range for programming/erasing)
Item Symbol Min. Typ. Max. Unit Test Conditions
Programming time*
1
*
2
*
4
t
P
⎯ 1 10 ms/128 bytes
⎯ 40 130 ms/4-Kbyte
block
⎯ 300 800 ms/32-Kbyte
block
Erase time*
1
*
2
*
4
t
E
⎯ 600 1500 ms/64-Kbyte
block
Programming time (total)*
1
*
2
*
4
Σ
tP
⎯ 1.4 4 s/160 Kbytes Ta = 25 °C
Erase time (total)*
1
*
2
*
4
Σ
tE
⎯ 1.4 4 s/160 Kbytes Ta = 25 °C
Programming and Erase time
(total)*
1
*
2
*
4
Σ
tPE
⎯ 2.9 8 s/160 Kbytes Ta = 25 °C
Reprogramming count N
WEC
100*
3
1000 ⎯ Times
Data retention time*
4
t
DRP
10 ⎯ ⎯ Years
Notes: 1. Programming and erase time depends on the data.
2. Programming and erase time do not include data transfer time.
3 This value indicates the minimum number of which the flash memory are
reprogrammed with all characteristics guaranteed. (The guaranteed value ranges
from 1 to the minimum number.)
4. This value indicates the characteristics while the flash memory is reprogrammed within
the specified range (including the minimum number).