Datasheet

Section 22 Flash Memory
Rev. 3.00 Sep. 28, 2009 Page 706 of 910
REJ09B0350-0300
22.8.2 User Program Mode
Programming/erasing of the user MAT is executed by downloading an on-chip program. The
programming/erasing flow is shown in figure 22.10.
Since high voltage is applied to the internal flash memory during programming/erasing, a
transition to the reset state must not be made during programming/erasing. A transition to the reset
state during programming/erasing may damage the flash memory. If a reset is input, the reset must
be released after the reset input period (period of RES = 0) of at least 100 μs.
When programming,
program data is prepared
Programming/erasing
procedure program is
transferred to the on-chip
RAM and executed
Programming/erasing
start
Programming/erasing
end
Programming/erasing is executed only in the on-chip RAM.
After programming/erasing is finished, protect the flash memory
by the hardware protection.
Make sure that the program data do not overlap with the
download destination specified by FTDAR.
1.
2.
3.
Figure 22.10 Programming/Erasing Flow