Datasheet

Section 24 Electrical Characteristics
Rev. 3.00 Mar 17, 2006 page 907 of 926
REJ09B0283-0300
24.6 Flash Memory Characteristics
Table 24.13 Flash Memory Characteristics
Conditions: V
CC
= 3.0 V to 3.6 V, AV
CC
= 3.0 V to 3.6 V, V
ref
= 3.0 V to AV
CC
,
V
SS
= AV
SS
= 0 V, T
a
= 0°C to 75°C (program/erase operating temperature range:
regular specifications), T
a
= 0°C to 85°C (program/erase operating temperature
range: wide-range specifications)
Item Symbol Min Typ Max Unit
Test
Conditions
Programming time
*
1
*
2
*
4
t
P
— 10 200
ms/
128 bytes
Erase time
*
1
*
3
*
6
t
E
— 50 1000
ms/
128 bytes
Reprogramming count N
WEC
100
*
7
10,000
*
8
— Times
Data retention time
*
9
t
DRP
10 ——Years
Programming Wait time after SWE bit setting
*
1
x1——µs
Wait time after PSU bit setting
*
1
y50——µs
Wait time after P bit setting
*
1
*
4
zz1—— 30 µs1 ≤ n ≤ 6
z2 —— 200 µs7 ≤ n ≤ 1000
z3 —— 10 µs Additional
program-
ming wait
Wait time after P bit clearing
*
1
α 5 ——µs
Wait time after PSU bit clearing
*
1
β 5 ——µs
Wait time after PV bit setting
*
1
γ 4 ——µs
Wait time after H'FF dummy write
*
1
ε 2 ——µs
Wait time after PV bit clearing
*
1
η 2 ——µs
Wait time after SWE bit clearing
*
1
θ 100 ——µs
Maximum number of writes
*
1
*
4
N —— 1000
*
5
Times
Erasing Wait time after SWE bit setting
*
1
x1——µs
Wait time after ESU bit setting
*
1
y 100 ——µs
Wait time after E bit setting
*
1
*
6
z —— 10 µsErase time
wait
Wait time after E bit clearing
*
1
α 10 ——µs
Wait time after ESU bit clearing
*
1
β 10 ——µs
Wait time after EV bit setting
*
1
γ 20 ——µs
Wait time after H'FF dummy write
*
1
ε 2 ——µs
Wait time after EV bit clearing
*
1
η 4 ——µs
Wait time after SWE bit clearing
*
1
θ 100 ——µs
Maximum number of erases
*
1
*
6
N —— 100 Times