Datasheet

Section 19 ROM
Rev.6.00 Sep. 27, 2007 Page 877 of 1268
REJ09B0220-0600
Execute programming/erase control
program (flash memory rewriting)
Branch to programming/erase
control program in RAM area
FWE = high*
Transfer programming/erase
control program to RAM
MD2, MD1, MD0 = 101 or 111
Reset start
Write FWE assessment program
and transfer program
(and programming/erase control
program if necessary) beforehand
Clear FWE*
Branch to application program
in flash memory
Notes: Do not apply a constant high level to the FWE pin. A high level should be applied to
the FWE pin only when programming or erasing flash memory. A
lso, while a high level
is applied to the FWE pin, the watchdog timer should be activated to prevent
overprogramming or overerasing due to program runaway, etc.
* For further information on FWE application and disconnecti
on, see section 19.30,
Flash Memory Programming and Erasing Precautions.
Figure 19.70 Example of User Program Mode Execution Procedure