Datasheet

Appendix B Internal I/O Registers
Rev.6.00 Sep. 27, 2007 Page 1195 of 1268
REJ09B0220-0600
FLMCR1—Flash Memory Control Register 1 H'FFC8 Flash Memory
(H8S/2326 F-ZTAT)
7
FWE
—
*1
R
6
SWE1
0
R/W
5
ESU1
0
R/W
4
PSU1
0
R/W
3
EV1
0
R/W
0
P1
0
R/W
2
PV1
0
R/W
1
E1
0
R/W
Erase 1
*2
Program 1
*2
Bit
Initial value
R/W
:
:
:
0 Program mode cleared
1 Transition to program mode
[Setting condition]
When FWE = 1, SWE1 = 1,
and PSU1 = 1
0 Erase mode cleared
1 Transition to erase mode
[Setting condition]
When FWE = 1, SWE1 = 1,
and ESU1 = 1
Program-Verify 1
*2
0 Program-verify mode cleared
1 Transition to program-verify mode
[Setting condition]
When FWE = 1 and SWE1 = 1
Erase-Verify 1
*2
0 Erase-verify mode cleared
1 Transition to erase-verify mode
[Setting condition]
When FWE = 1 and SWE1 = 1
Erase Setup 1
*2
0 Erase setup cleared
1 Erase setup
[Setting condition]
When FWE = 1 and SWE1 = 1
Program Setup 1
*2
0 Program setup cleared
1 Program setup
[Setting condition]
When FWE = 1 and SWE1 = 1
Software Write Enable 1
*2
0 Writes disabled
1 Writes enabled
[Setting condition]
When FWE = 1
Flash Write Enable
Notes: 1. Determined by the state of the FWE pin.
2. Applicable addresses are H'000000 to H'03FFFF.
0 When a low level is input to the FWE pin (hardware-protected state)
1 When a high level is input to the FWE pin