Datasheet

Section 19 ROM
Rev.6.00 Sep. 27, 2007 Page 905 of 1268
REJ09B0220-0600
Table 19.66 Command Wait State Transition Time Specifications
Item Symbol Min Max Unit
Standby release (oscillation
stabilization time)
t
osc1
30 — ms
PROM mode setup time t
bmv
10 — ms
V
CC
hold time t
dwn
0 — ms
V
CC
RES
FWE
Memory read
mode
Command
wait state
Command
wait state
Normal/
abnormal end
identification
Auto-program mode
Auto-erase mode
t
osc1
t
bmv
t
dwn
Note: Except in auto-program mode and auto-erase mode, drive the FWE input pin low.
Figure 19.85 Oscillation Stabilization Time, PROM Mode Setup Time, and Power Supply
Fall Sequence
19.29.10 Notes on Memory Programming
• When programming addresses which have previously been programmed, carry out auto-
erasing before auto-programming.
• When performing programming using PROM mode on a chip that has been
programmed/erased in an on-board programming mode, auto-erasing is recommended before
carrying out auto-programming.
Notes: 1. The flash memory is initially in the erased state when the device is shipped by Renesas
Technology. For other chips for which the erasure history is unknown, it is
recommended that auto-erasing be executed to check and supplement the initialization
(erase) level.
2. Auto-programming should be performed once only on the same address block.
Additional programming cannot be carried out on address blocks that have already
been programmed.