Datasheet

Section 19 ROM
Rev.6.00 Sep. 27, 2007 Page 816 of 1268
REJ09B0220-0600
Clear FWE*
FWE = high*
Branch to flash memory application
program
Branch to program/erase control
program in RAM area
Execute program/erase control
program (flash memory rewriting)
Transfer program/erase control
program to RAM
MD2, MD1, MD0 = 110, 111
Reset-start
Write the FWE assessment program and
transfer program (and the program/erase
control program if necessary) beforehand
Notes: Do not apply a constant high level to the FWE pin. Apply a high level to the FWE pin
only when the flash memory is programmed or erased. Also, while a high level is
applied to the FWE pin, the watchdog timer should be activated to prevent
overprogramming or overerasing due to program runaway, etc.
* For further information on FWE application and disconnection, see section 19.21,
Flash Memory Programming and Erasing Precautions.
Figure 19.40 User Program Mode Execution Procedure