Users Manual
Table Of Contents
- 45. 12-Bit D/A Converter (R12DAA)
- 46. Temperature Sensor (TEMPSA)
- 47. Comparator B (CMPBa)
- 47.1 Overview
- 47.2 Register Descriptions
- 47.2.1 Comparator B1 Control Register 1 (CPB1CNT1)
- 47.2.2 Comparator B1 Control Register 2 (CPB1CNT2)
- 47.2.3 Comparator B1 Flag Register (CPB1FLG)
- 47.2.4 Comparator B1 Interrupt Control Register (CPB1INT)
- 47.2.5 Comparator B1 Filter Select Register (CPB1F)
- 47.2.6 Comparator B1 Mode Select Register (CPB1MD)
- 47.2.7 Comparator B1 Reference Input Voltage Select Register (CPB1REF)
- 47.2.8 Comparator B1 Output Control Register (CPB1OCR)
- 47.3 Operation
- 47.4 Comparator B2 and Comparator B3 Interrupts
- 47.5 Usage Note
- 48. Data Operation Circuit (DOC)
- 49. RAM
- 50. Flash Memory (FLASH)
- 50.1 Overview
- 50.2 ROM Area and Block Configuration
- 50.3 E2 DataFlash Area and Block Configuration
- 50.4 Register Descriptions
- 50.4.1 E2 DataFlash Control Register (DFLCTL)
- 50.4.2 Flash P/E Mode Entry Register (FENTRYR)
- 50.4.3 Protection Unlock Register (FPR)
- 50.4.4 Protection Unlock Status Register (FPSR)
- 50.4.5 Flash P/E Mode Control Register (FPMCR)
- 50.4.6 Flash Initial Setting Register (FISR)
- 50.4.7 Flash Reset Register (FRESETR)
- 50.4.8 Flash Area Select Register (FASR)
- 50.4.9 Flash Control Register (FCR)
- 50.4.10 Flash Extra Area Control Register (FEXCR)
- 50.4.11 Flash Processing Start Address Register H (FSARH)
- 50.4.12 Flash Processing Start Address Register L (FSARL)
- 50.4.13 Flash Processing End Address Register H (FEARH)
- 50.4.14 Flash Processing End Address Register L (FEARL)
- 50.4.15 Flash Write Buffer Register n (FWBn) (n = 0 to 3)
- 50.4.16 Flash Status Register 0 (FSTATR0)
- 50.4.17 Flash Status Register 1 (FSTATR1)
- 50.4.18 Flash Error Address Monitor Register H (FEAMH)
- 50.4.19 Flash Error Address Monitor Register L (FEAML)
- 50.4.20 Flash Start-Up Setting Monitor Register (FSCMR)
- 50.4.21 Flash Access Window Start Address Monitor Register (FAWSMR)
- 50.4.22 Flash Access Window End Address Monitor Register (FAWEMR)
- 50.4.23 Unique ID Register n (UIDRn) (n = 0 to 3)
- 50.5 Start-Up Program Protection
- 50.6 Area Protection
- 50.7 Programming and Erasure
- 50.8 Boot Mode
- 50.9 Flash Memory Protection
- 50.10 Communication Protocol
- 50.10.1 State Transition in Boot Mode (SCI Interface)
- 50.10.2 Command and Response Configuration
- 50.10.3 Response to Undefined Commands
- 50.10.4 Boot Mode Status Inquiry
- 50.10.5 Inquiry Commands
- 50.10.6 Setting Commands
- 50.10.7 ID Code Authentication Command
- 50.10.8 Program/Erase Commands
- 50.10.9 Read-Check Commands
- 50.11 Serial Programmer Operation in Boot Mode (SCI Interface)
- 50.11.1 Bit Rate Automatic Adjustment Procedure
- 50.11.2 Procedure to Receive the MCU Information
- 50.11.3 Procedure to Select the Device and Change the Bit Rate
- 50.11.4 Procedure for Transition to the Program/Erase Host Command Wait State
- 50.11.5 Procedure to Unlock Boot Mode ID Code Protection
- 50.11.6 Procedure to Erase the User Area and Data Area
- 50.11.7 Procedure to Program the User Area and Data Area
- 50.11.8 Procedure to Check Data in the User Area
- 50.11.9 Procedure to Check Data in the Data Area
- 50.11.10 Procedure to Set the Access Window in the User Area
- 50.12 Rewriting by Self-Programming
- 50.13 Usage Notes
- 50.14 Usage Notes in Boot Mode
- 51. Electrical Characteristics
- 51.1 Absolute Maximum Ratings
- 51.2 DC Characteristics
- 51.3 AC Characteristics
- 51.3.1 Clock Timing
- 51.3.2 Reset Timing
- 51.3.3 Timing of Recovery from Low Power Consumption Modes
- 51.3.4 Control Signal Timing
- 51.3.5 Timing of On-Chip Peripheral Modules
- 51.3.5.1 Timing of I/O Ports
- 51.3.5.2 Timing of MTU/TPU
- 51.3.5.3 Timing of POE
- 51.3.5.4 Timing of TMR
- 51.3.5.5 Timing of SCI
- 51.3.5.6 Timing of RIIC
- 51.3.5.7 Timing of RSPI
- 51.3.5.8 Timing of SSI
- 51.3.5.9 Timing of SDHI
- 51.3.5.10 Timing of A/D Converter Trigger
- 51.3.5.11 Timing of CAC
- 51.3.5.12 Timing of CLKOUT
- 51.3.5.13 Timing of CLKOUT_RF
- 51.4 USB Characteristics
- 51.5 A/D Conversion Characteristics
- 51.6 D/A Conversion Characteristics
- 51.7 Temperature Sensor Characteristics
- 51.8 Comparator Characteristics
- 51.9 CTSU Characteristics
- 51.10 Characteristics of Power-On Reset Circuit and Voltage Detection Circuit
- 51.11 Oscillation Stop Detection Timing
- 51.12 Battery Backup Function Characteristics
- 51.13 ROM (Flash Memory for Code Storage) Characteristics
- 51.14 E2 DataFlash Characteristics (Flash Memory for Data Storage)
- 51.15 BLE Characteristics
- 51.16 Usage Notes
- Appendix 1. Port States in Each Processing Mode
- Appendix 2. Package Dimensions
- REVISION HISTORY
- Colophon
- Address List
- Back cover
R01UH0823EJ0110 Rev.1.10 Page 1687 of 1852
Nov 30, 2020
RX23W Group 50. Flash Memory (FLASH)
50.4.9 Flash Control Register (FCR)
Note 1. This does not include set the FCR register to 00h when the FSTATR1.FRDY flag is 1.
Data can be written to the FCR register when in ROM P/E mode and the ROM can be programmed/erased or in E2
DataFlash P/E mode.
This register is initialized by a reset or setting the FRESETR.FRESET bit to 1. Data cannot be written to this register
while the FRESETR.FRESET bit is 1.
Note that this register cannot be initialized by the FRESETR.FRESET bit while a software command is being executed.
CMD[3:0] Bits (Software Command Setting)
These bits are used to set a software command (program, blank check, block erase, or all-block erase).
The function of each command is described below.
[Program]
• Write the value set in registers FWB0, FWB1, FWB2, and FWB3 to the address set in registers FSARH and
FSARL.
[Blank check]
• Check whether there is data in the area from the address set in registers FSARH and FSARL to the address set in
registers FEARH and FEARL. Confirm that data is not programmed in the area. This command does not guarantee
whether the area remains erased.
[Block erase]
• Erase consecutive areas specified in the flash memory by the blocks. Set the beginning address of the block in
registers FSARH and FSARL and the end address in registers FEARH and FEARL.
[All-block erase]
• Erase all blocks in the ROM or E2 DataFlash.
All-block erase requires less time to erase the memory compared to block erase. When erasing the whole of the
ROM area, set the beginning address of the ROM area in registers FSARH and FSARL, and the end address in
registers FEARH and FEARL.
Table 50.4 lists the setting address for all-block erase.
Address(es): FLASH.FCR 007F C114h
b7 b6 b5 b4 b3 b2 b1 b0
OPST STOP — — CMD[3:0]
Value after reset:
00000000
Bit Symbol Bit Name Description R/W
b3 to b0 CMD[3:0] Software Command Setting
b3 b0
0 0 0 1: Program
0 0 1 1: Blank check
0 1 0 0: Block erase
0 1 1 0: All-block erase
Settings other than above are prohibited.*
1
R/W
b5, b4 — Reserved These bits are read as 0. The write value should be 0. R/W
b6 STOP Forced Processing Stop When this bit is set to 1, the processing being executed can be
forcibly stopped.
R/W
b7 OPST Processing Start 0: Processing stops.
1: Processing starts.
R/W