Users Manual
Table Of Contents
- 45. 12-Bit D/A Converter (R12DAA)
- 46. Temperature Sensor (TEMPSA)
- 47. Comparator B (CMPBa)
- 47.1 Overview
- 47.2 Register Descriptions
- 47.2.1 Comparator B1 Control Register 1 (CPB1CNT1)
- 47.2.2 Comparator B1 Control Register 2 (CPB1CNT2)
- 47.2.3 Comparator B1 Flag Register (CPB1FLG)
- 47.2.4 Comparator B1 Interrupt Control Register (CPB1INT)
- 47.2.5 Comparator B1 Filter Select Register (CPB1F)
- 47.2.6 Comparator B1 Mode Select Register (CPB1MD)
- 47.2.7 Comparator B1 Reference Input Voltage Select Register (CPB1REF)
- 47.2.8 Comparator B1 Output Control Register (CPB1OCR)
- 47.3 Operation
- 47.4 Comparator B2 and Comparator B3 Interrupts
- 47.5 Usage Note
- 48. Data Operation Circuit (DOC)
- 49. RAM
- 50. Flash Memory (FLASH)
- 50.1 Overview
- 50.2 ROM Area and Block Configuration
- 50.3 E2 DataFlash Area and Block Configuration
- 50.4 Register Descriptions
- 50.4.1 E2 DataFlash Control Register (DFLCTL)
- 50.4.2 Flash P/E Mode Entry Register (FENTRYR)
- 50.4.3 Protection Unlock Register (FPR)
- 50.4.4 Protection Unlock Status Register (FPSR)
- 50.4.5 Flash P/E Mode Control Register (FPMCR)
- 50.4.6 Flash Initial Setting Register (FISR)
- 50.4.7 Flash Reset Register (FRESETR)
- 50.4.8 Flash Area Select Register (FASR)
- 50.4.9 Flash Control Register (FCR)
- 50.4.10 Flash Extra Area Control Register (FEXCR)
- 50.4.11 Flash Processing Start Address Register H (FSARH)
- 50.4.12 Flash Processing Start Address Register L (FSARL)
- 50.4.13 Flash Processing End Address Register H (FEARH)
- 50.4.14 Flash Processing End Address Register L (FEARL)
- 50.4.15 Flash Write Buffer Register n (FWBn) (n = 0 to 3)
- 50.4.16 Flash Status Register 0 (FSTATR0)
- 50.4.17 Flash Status Register 1 (FSTATR1)
- 50.4.18 Flash Error Address Monitor Register H (FEAMH)
- 50.4.19 Flash Error Address Monitor Register L (FEAML)
- 50.4.20 Flash Start-Up Setting Monitor Register (FSCMR)
- 50.4.21 Flash Access Window Start Address Monitor Register (FAWSMR)
- 50.4.22 Flash Access Window End Address Monitor Register (FAWEMR)
- 50.4.23 Unique ID Register n (UIDRn) (n = 0 to 3)
- 50.5 Start-Up Program Protection
- 50.6 Area Protection
- 50.7 Programming and Erasure
- 50.8 Boot Mode
- 50.9 Flash Memory Protection
- 50.10 Communication Protocol
- 50.10.1 State Transition in Boot Mode (SCI Interface)
- 50.10.2 Command and Response Configuration
- 50.10.3 Response to Undefined Commands
- 50.10.4 Boot Mode Status Inquiry
- 50.10.5 Inquiry Commands
- 50.10.6 Setting Commands
- 50.10.7 ID Code Authentication Command
- 50.10.8 Program/Erase Commands
- 50.10.9 Read-Check Commands
- 50.11 Serial Programmer Operation in Boot Mode (SCI Interface)
- 50.11.1 Bit Rate Automatic Adjustment Procedure
- 50.11.2 Procedure to Receive the MCU Information
- 50.11.3 Procedure to Select the Device and Change the Bit Rate
- 50.11.4 Procedure for Transition to the Program/Erase Host Command Wait State
- 50.11.5 Procedure to Unlock Boot Mode ID Code Protection
- 50.11.6 Procedure to Erase the User Area and Data Area
- 50.11.7 Procedure to Program the User Area and Data Area
- 50.11.8 Procedure to Check Data in the User Area
- 50.11.9 Procedure to Check Data in the Data Area
- 50.11.10 Procedure to Set the Access Window in the User Area
- 50.12 Rewriting by Self-Programming
- 50.13 Usage Notes
- 50.14 Usage Notes in Boot Mode
- 51. Electrical Characteristics
- 51.1 Absolute Maximum Ratings
- 51.2 DC Characteristics
- 51.3 AC Characteristics
- 51.3.1 Clock Timing
- 51.3.2 Reset Timing
- 51.3.3 Timing of Recovery from Low Power Consumption Modes
- 51.3.4 Control Signal Timing
- 51.3.5 Timing of On-Chip Peripheral Modules
- 51.3.5.1 Timing of I/O Ports
- 51.3.5.2 Timing of MTU/TPU
- 51.3.5.3 Timing of POE
- 51.3.5.4 Timing of TMR
- 51.3.5.5 Timing of SCI
- 51.3.5.6 Timing of RIIC
- 51.3.5.7 Timing of RSPI
- 51.3.5.8 Timing of SSI
- 51.3.5.9 Timing of SDHI
- 51.3.5.10 Timing of A/D Converter Trigger
- 51.3.5.11 Timing of CAC
- 51.3.5.12 Timing of CLKOUT
- 51.3.5.13 Timing of CLKOUT_RF
- 51.4 USB Characteristics
- 51.5 A/D Conversion Characteristics
- 51.6 D/A Conversion Characteristics
- 51.7 Temperature Sensor Characteristics
- 51.8 Comparator Characteristics
- 51.9 CTSU Characteristics
- 51.10 Characteristics of Power-On Reset Circuit and Voltage Detection Circuit
- 51.11 Oscillation Stop Detection Timing
- 51.12 Battery Backup Function Characteristics
- 51.13 ROM (Flash Memory for Code Storage) Characteristics
- 51.14 E2 DataFlash Characteristics (Flash Memory for Data Storage)
- 51.15 BLE Characteristics
- 51.16 Usage Notes
- Appendix 1. Port States in Each Processing Mode
- Appendix 2. Package Dimensions
- REVISION HISTORY
- Colophon
- Address List
- Back cover
R01UH0823EJ0110 Rev.1.10 Page 1628 of 1852
Nov 30, 2020
RX23W Group 44. 12-Bit A/D Converter (S12ADE)
44.3.9 Disconnection Detection Assist Function
This converter incorporates the function to fix the charge for sampling capacitance to the specified state (reference
voltage selected by the A/D high-potential/low-potential reference voltage control register) before start of A/D
conversion. This function enables disconnection detection in wiring of analog inputs.
Figure 44.24 illustrates the A/D conversion operation when the disconnection detection assist function is used. Figure
44.25
shows an example of disconnection detection when precharge is selected. Figure 44.26 shows an example of
disconnection detection when discharge is selected.
Figure 44.24 Operation of A/D Conversion When the Disconnection Detection Assist Function is Used
Figure 44.25 Example of Disconnection Detection When Precharge is Selected
ADST
A/D conversion
operation
Sampling time
Disconnection detection assist time (0 to 15 cycles of ADCLK)
Conversion time Sampling time
Disconnection detection assist time (0 to 15 cycles of ADCLK)
Conversion time
Precharge
control signal
Discharge
control signal
Analog input
ANn
ON
OFF
R = 1 MΩ
Disconnection
Sampling capacitance
Example of the
external circuit
*1
Precharge
VREFH0
or AVCC0
Note 1. The converted result should be used after fully evaluated because the result data when disconnection
occurs varies depending on the external circuit.